AO4916L Todos los transistores

Rev 3 Nov 2004 AO4916, AO4916L( Green Product ) Dual N-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features VDS (V) = 30V The AO4916 uses advanced trench technology to ID = 8.5A provide excellent R DS(ON) and low gate charge. The RDS(ON)

AO4916 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4916 uses advanced trench technology to provide Q1(N-Channel) Q2(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V 30V make a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V) rectifier combination for use in DC-DC converters. A RDS(ON)

AO4914 30V Dual N-Channel MOSFET with Schottky Diode General Description Product Summary The AO4914 uses advanced trench technology to provide Q1(N-Channel) Q2(N-Channel) excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V 30V make a compact and efficient switch and synchronous ID= 8A (VGS=10V) 8A (VGS=10V) rectifier combination for use in DC-DC converters. A RDS(ON)

SMD Type MOSFET Dual N-Channel MOSFET AO4914 (KO4914) SOP-8 Unit mm Features N-Channel 1 VDS (V) = 30V 1.50 0.15 ID = 8 A (VGS = 10V) RDS(ON) 20.5m (VGS = 10V) 1 S1/A 5 D2 RDS(ON) 28m (VGS = 4.5V) 2 G1 6 D2 7 D1/K VDS (V) = 30V, IF = 3A, VF

SMD Type MOSFET Dual N-Channel MOSFET AO4918 (KO4918) SOP-8 Unit mm Features N-Channel 1 VDS (V) = 30V ID = 9.3 A (VGS = 10V) 1.50 0.15 RDS(ON) 14.5m (VGS = 10V) RDS(ON) 16m (VGS = 4.5V) 1 D2 5 D1/S2/K VDS (V) = 30V, IF = 3A, VF