AO6806 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AO6806
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   Qgⓘ - Carga de la puerta: 5.6 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.03 Ohm
   Paquete / Cubierta: TSOP6

Búsqueda de reemplazo de MOSFET AO6806

AO6806 Datasheet (PDF)

..1. Size:204K aosemi
ao6806.pdf

AO6806Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AO6806 uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge and ID = 5.0A (VGS = 4.5V)operation with gate voltages as low as 2.5V. This deviceRDS(ON)

9.1. Size:270K aosemi
ao6801.pdf

AO680130V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801 uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

9.2. Size:199K aosemi
ao6802.pdf

AO680230V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO6802 uses advanced trench technology to VDS30Vprovide excellent RDS(ON) and low gate charge. This ID (at VGS=10V) 3.5Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS=10V)

9.3. Size:331K aosemi
ao6801a.pdf

AO6801A30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS-30VThe AO6801A uses advanced trench technology toprovide excellent RDS(ON) and low gate charge. This ID (at VGS=-10V) -2.3Adevice is suitable for use as a load switch or in PWM RDS(ON) (at VGS =-10V)

9.4. Size:228K aosemi
ao6800.pdf

AO680030V Dual N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AO6800 uses advanced trench technology to provideexcellent RDS(ON), low gate charge and operation with gate ID (at VGS=10V) 3.4Avoltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS= 10V)

9.5. Size:198K aosemi
ao6804a.pdf

AO6804A20V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO6804A uses advanced trench technology to VDS = 20Vprovide excellent RDS(ON), low gate charge and operationID = 5.0A (VGS = 4.5V)with gate voltages as low as 2.5V. This device isRDS(ON)

9.6. Size:280K aosemi
ao6808.pdf

AO680820V Dual N-Channel MOSFETGeneral Description Product SummaryThe AO6808 uses advanced trench technology to provide excellent VDS = 20VRDS(ON), low gate charge and operation with gate voltages as low as ID = 6A (VGS = 4.5V)2.5V. This device is suitable for use as a load switch. It is ESD RDS(ON) = 19m (typical) (VGS = 4.5V)protected. RDS(ON) = 20m (typical) (VGS = 4.0V)R

9.7. Size:303K aosemi
ao6801e.pdf

AO6801E30V Dual P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AO6801E combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=-10V) -2Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=-10V)

9.8. Size:1443K kexin
ao6804.pdf

SMD Type MOSFETDual N-Channel MOSFETAO6804 (KO6804)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID =5 A (VGS = 4.5V) RDS(ON) 32m (VGS = 4.5V) RDS(ON) 34m (VGS = 4V)2 31+0.02 RDS(ON) 37m (VGS = 3.1V)0.15 -0.02+0.01-0.01 RDS(ON) 42m (VGS = 2.5V)+0.2-0.1D1 D21 S1 4 G22 D1/D2 5 D1/D2

9.9. Size:1386K kexin
ao6801.pdf

SMD Type MOSFETDual P-Channel MOSFETAO6801 (KO6801)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) =-30V ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V)2 31 RDS(ON) 200m (VGS =-2.5V) +0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1G1

9.10. Size:1032K kexin
ao6802.pdf

SMD Type MOSFETDual N-Channel MOSFETAO6802 (KO6802)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 30V ID =3.5 A (VGS = 10V) RDS(ON) 50m (VGS = 10V) RDS(ON) 70m (VGS = 4.5V)2 31+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1G1 G2S1 S2 Absolute Maximum Ratings

9.11. Size:1239K kexin
ao6801a.pdf

SMD Type MOSFETDual P-Channel MOSFETAO6801A (KO6801A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-30V 5 46 ID =-2.3A (VGS =-10V) RDS(ON) 115m (VGS =-10V) RDS(ON) 150m (VGS =-4.5V)2 31 RDS(ON) 200m (VGS =-2.5V)+0.020.15 -0.02+0.01-0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1

9.12. Size:1361K kexin
ao6800.pdf

SMD Type MOSFETDual N-Channel MOSFETAO6800 (KO6800)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 30V ID =3.4 A (VGS = 10V) RDS(ON) 60m (VGS = 10V)2 31 RDS(ON) 70m (VGS = 4.5V)+0.020.15 -0.02+0.01 RDS(ON) 90m (VGS = 2.5V) -0.01+0.2-0.1D1 D21 Gate1 4 Drain22 Source2 5 Source13 Gate2 6 Drain1G1 G2

9.13. Size:1678K kexin
ao6804a.pdf

SMD Type MOSFETDual N-Channel MOSFETAO6804A (KO6804A)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) = 20V 6 5 4 ID =5 A (VGS = 4.5V) RDS(ON) 28m (VGS = 4.5V) RDS(ON) 30m (VGS = 4V)2 31 RDS(ON) 34m (VGS = 3.1V)+0.020.15 -0.02+0.01-0.01 RDS(ON) 39m (VGS = 2.5V)+0.2-0.1 ESD Rating: 2000V HBM1 S1

9.14. Size:1940K kexin
ao6808.pdf

SMD Type MOSFETDual N-Channel MOSFETAO6808 (KO6808)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features6 5 4 VDS (V) = 20V ID =6 A (VGS = 4.5V) RDS(ON) 23m (VGS = 4.5V) RDS(ON) 25m (VGS = 4V)2 31+0.02 RDS(ON) 27m (VGS = 3.1V)0.15 -0.02+0.01-0.01 RDS(ON) 30m (VGS = 2.5V)+0.2-0.1 ESD Rating: 2000V HBM1 S1 4

9.15. Size:1879K kexin
ao6801e.pdf

SMD Type MOSFETDual P-Channel MOSFETAO6801E (KO6801E)( )SOT-23-6 Unit: mm0.4+0.1-0.1 Features VDS (V) =-30V 6 5 4 ID =-2A (VGS =-10V) RDS(ON) 110m (VGS =-10V) RDS(ON) 135m (VGS =-4.5V)2 31 RDS(ON) 185m (VGS =-2.5V)+0.020.15 -0.02+0.01-0.01 ESD Rating: 2000V HBM+0.2-0.1D1 D2 1 Gate1 4 Drain22 Source2 5 S

9.16. Size:1785K cn vbsemi
ao6801a.pdf

AO6801Awww.VBsemi.twDual P-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.075 at VGS = - 4.5V - 4.0 TrenchFET Power MOSFET- 20 2.7 nC0.100 at VGS = - 2.5 V - 3.2 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Load Switch for Portable App

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: NCE65N290

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