AOB11S60L Todos los transistores

 

AOB11S60L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOB11S60L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 178 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 37.3 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.399 Ohm
   Paquete / Cubierta: TO263
 

 Búsqueda de reemplazo de AOB11S60L MOSFET

   - Selección ⓘ de transistores por parámetros

 

AOB11S60L Datasheet (PDF)

 ..1. Size:292K  aosemi
 aob11s60l.pdf pdf_icon

AOB11S60L

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

 6.1. Size:292K  aosemi
 aob11s60.pdf pdf_icon

AOB11S60L

AOT11S60/AOB11S60/AOTF11S60TM600V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT11S60& AOB11S60 & AOTF11S60 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 11nCBy providin

 6.2. Size:253K  inchange semiconductor
 aob11s60.pdf pdf_icon

AOB11S60L

isc N-Channel MOSFET Transistor AOB11S60FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 0.399(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 7.1. Size:300K  aosemi
 aob11s65l.pdf pdf_icon

AOB11S60L

AOT11S65/AOB11S65/AOTF11S65TM650V 11A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT11S65 & AOB11S65 & AOTF11S65 have beenfabricated using the advanced MOSTM high voltage IDM 45Aprocess that is designed to deliver high levels of RDS(ON),max 0.399performance and robustness in switching applications. Qg,typ 13.2nCBy provi

MOSTRAR MÁS

Otros transistores... AO8842 , AOD400 , AOD402 , AOD404 , AOD406 , AOD408 , AOD410 , AOB10N60L , IRF2807 , AOB11S65L , AOB12N50L , AOB15S60L , AOB15S65L , AOB20S60L , AOB25S65L , AOB270L , AOB27S60L .

History: NCE6990 | WMO190N03TS

 

 
Back to Top

 


 
.