AOB270L Todos los transistores

 

AOB270L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOB270L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 500 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 140 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 24 nS
   Cossⓘ - Capacitancia de salida: 1560 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0028 Ohm
   Paquete / Cubierta: TO263

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AOB270L Datasheet (PDF)

 ..1. Size:329K  aosemi
aob270l.pdf

AOB270L
AOB270L

AOT270L/AOB270L75V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AOT270L/AOB270L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.1. Size:324K  aosemi
aob270al.pdf

AOB270L
AOB270L

AOT270AL/AOB270AL75V N-Channel MOSFETGeneral Description Product SummaryVDS75VThe AOT270AL/AOB270AL uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 140Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

 8.2. Size:238K  inchange semiconductor
aob270al.pdf

AOB270L
AOB270L

isc N-Channel MOSFET Transistor AOB270ALFEATURESDrain Current I = 140A@ T =25D CDrain Source Voltage-: V = 75V(Min)DSSStatic Drain-Source On-Resistance: R = 2.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

 9.1. Size:376K  aosemi
aot27s60 aob27s60 aotf27s60.pdf

AOB270L
AOB270L

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 9.2. Size:295K  aosemi
aob27s60.pdf

AOB270L
AOB270L

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 9.3. Size:295K  aosemi
aob27s60l.pdf

AOB270L
AOB270L

AOT27S60/AOB27S60/AOTF27S60TM600V 27A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT27S60& AOB27S60 & AOTF27S60 have beenfabricated using the advanced MOSTM high voltage IDM 110Aprocess that is designed to deliver high levels of RDS(ON),max 0.16performance and robustness in switching applications. Qg,typ 26nCBy providin

 9.4. Size:258K  inchange semiconductor
aob27s60.pdf

AOB270L
AOB270L

Isc N-Channel MOSFET Transistor AOB27S60FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

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