AOB7S60L Todos los transistores

 

AOB7S60L MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOB7S60L

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 7 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 28 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.54 Ohm

Encapsulados: TO263

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AOB7S60L datasheet

 ..1. Size:287K  aosemi
 aob7s60l.pdf pdf_icon

AOB7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

 7.1. Size:288K  aosemi
 aot7s60 aob7s60 aotf7s60.pdf pdf_icon

AOB7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

 7.2. Size:288K  aosemi
 aob7s60.pdf pdf_icon

AOB7S60L

AOT7S60/AOB7S60/AOTF7S60 TM 600V 7A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOT7S60 & AOB7S60 & AOTF7S60 have been fabricated using the advanced MOSTM high voltage IDM 33A process that is designed to deliver high levels of RDS(ON),max 0.6 performance and robustness in switching applications. Qg,typ 8.2nC By providing low R

 7.3. Size:255K  inchange semiconductor
 aob7s60.pdf pdf_icon

AOB7S60L

isc N-Channel MOSFET Transistor AOB7S60 FEATURES Drain Current I =7A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R = 0.6 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose a

MOSTRAR MÁS

Otros transistores... AOB15S65L , AOB20S60L , AOB25S65L , AOB270L , AOB27S60L , AOB418 , AOB482 , AOB4S60L , IRFZ46N , AOB7S65L , AOD4100 , AOD4104 , AOD4106 , AOD4110 , AOD4112 , AOI1N60L , AOI472A .

History: SM6128NSKP | STK630F | PMF250XN | 2SJ217 | STD24N06LT4G | MDV5524URH | SM4309PSKP

 

 

 

 

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