AOI518 Todos los transistores

 ..1. Size:309K  aosemi
 aoi518.pdf

AOD518/AOI518 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 10VGS ID (at VGS=10V) 54A Low Gate Charge RDS(ON) (at VGS=10V)

 9.1. Size:310K  aosemi
 aoi510.pdf

AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 9.2. Size:333K  aosemi
 aoi514.pdf

AOD514/AOI514/AOY514 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.3. Size:511K  aosemi
 aod510 aoi510.pdf

AOD510/AOI510 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)

 9.4. Size:326K  aosemi
 aoi516.pdf

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.5. Size:326K  aosemi
 aod516 aoi516 aoy516.pdf

AOD516/AOI516/AOY516 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power MOSFET technology Very Low RDS(on) at 4.5V VGS ID (at VGS=10V) 46A Low Gate Charge RDS(ON) (at VGS=10V)

 9.6. Size:274K  inchange semiconductor
 aoi510.pdf

isc N-Channel MOSFET Transistor AOI510 FEATURES Drain Current I = 70A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 3.6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.7. Size:274K  inchange semiconductor
 aoi514.pdf

isc N-Channel MOSFET Transistor AOI514 FEATURES Drain Current I = 46A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 5.9m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose

 9.8. Size:274K  inchange semiconductor
 aoi516.pdf

isc N-Channel MOSFET Transistor AOI516 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage- V =30V(Min) DSS Static Drain-Source On-Resistance R = 5.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpose