AOK20S60L Todos los transistores

 ..1. Size:251K  aosemi
 aok20s60l.pdf

AOK20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK20S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.199 applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eo

 ..2. Size:378K  inchange semiconductor
 aok20s60l.pdf

isc N-Channel MOSFET Transistor AOK20S60L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.199 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

 6.1. Size:251K  aosemi
 aok20s60.pdf

AOK20S60 TM 600V 20A MOS Power Transistor General Description Product Summary VDS @ Tj,max 700V The AOK20S60 has been fabricated using the advanced MOSTM high voltage process that is designed to deliver IDM 80A high levels of performance and robustness in switching RDS(ON),max 0.199 applications. Qg,typ 20nC By providing low RDS(on), Qg and EOSS along with Eo

 6.2. Size:212K  inchange semiconductor
 aok20s60.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor AOK20S60 FEATURES With TO-247 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS PFC stages Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:445K  aosemi
 aok20n60.pdf

AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.2. Size:1277K  aosemi
 aok20b65m1.pdf

AOK20B65M1/AOT20B65M1/AOB20B65M1 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest Alpha IGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(sat) enab

 9.3. Size:720K  aosemi
 aok20b60d1.pdf

AOK20B60D1 TM 600V, 20A Alpha IGBT with Diode General Description Product Summary VCE 600V The Alpha IGBTTM line of products offers best-in-class IC (TC=100 C) 20A performance in conduction and switching losses, with robust short circuit capability. They are designed for ease VCE(sat) (TC=25 C) 1.85V of paralleling, minimal gate spike under high dV/dt conditions and resistance

 9.4. Size:713K  aosemi
 aok20b135d1.pdf

AOK20B135D1 TM 1350V, 20A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.57V Better thermal management

 9.5. Size:1321K  aosemi
 aok20b120e1.pdf

AOK20B120E1 TM Alpha IGBT with Diode 1200V, 20A General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1200V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.68V Better thermal management Hi

 9.6. Size:1095K  aosemi
 aok20b65m2.pdf

AOK20B65M2 TM 650V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary VCE Latest AlphaIGBT ( IGBT) technology 650V 650V breakdown voltage IC (TC=100 C) 20A Very fast and soft recovery freewheeling diode VCE(sat) (TJ=25 C) 1.7V High efficient turn-on di/dt controllability Low VCE(SAT) enables high efficiencies

 9.7. Size:810K  aosemi
 aok20b120e2.pdf

AOK20B120E2 TM 1200V, 20A Alpha IGBT With soft and fast recovery anti-parallel diode General Description Product Summary Latest Alpha IGBT ( IGBT) technology VCE 1200V Best in Class VCE(sat) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time VCE(sat) (TC=25 C) 1.75V Very smooth turn-off current waveforms reduce EM

 9.8. Size:1176K  aosemi
 aok20b120d1.pdf

AOK20B120D1 TM 1200V, 20A Alpha IGBT with Diode General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1200V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.54V Better thermal management

 9.9. Size:1683K  aosemi
 aok20b135e1.pdf

AOK20B135E1 TM Alpha IGBT with Diode 1350V, 20A General Description Product Summary Latest AlphaIGBT ( IGBT) technology VCE 1350V Best in Class VCE(SAT) enables high efficiencies IC (TC=100 C) 20A Low turn-off switching loss due to fast turn-off time Very smooth turn-off current waveforms reduce EMI VCE(sat) (TC=25 C) 1.8V Better thermal management Hig

 9.10. Size:445K  aosemi
 aok20n60l.pdf

AOK20N60 600V,20A N-Channel MOSFET General Description Product Summary VDS 700V@150 The AOK20N60 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high ID (at VGS=10V) 20A levels of performance and robustness in popular AC-DC RDS(ON) (at VGS=10V)

 9.11. Size:377K  inchange semiconductor
 aok20n60l.pdf

isc N-Channel MOSFET Transistor AOK20N60L FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage- V =600V(Min) DSS Static Drain-Source On-Resistance R =0.37 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpo