AOL1206 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOL1206
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 54 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   trⓘ - Tiempo de subida: 2 nS
   Cossⓘ - Capacitancia de salida: 510 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: ULTRASO8

Búsqueda de reemplazo de MOSFET AOL1206

AOL1206 Datasheet (PDF)

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aol1206.pdf

AOL120630V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1206 uses trench MOSFET technology that is 30Vuniquely optimized to provide the most efficient high ID (at VGS=10V)54Afrequency switching performance.Power losses are

8.1. Size:242K aosemi
aol1208.pdf

AOL120830V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOL1208 uses trench MOSFET technology that is 30V50Auniquely optimized to provide the most efficient high ID (at VGS=10V)frequency switching performance.Power losses are

8.2. Size:223K aosemi
aol1202.pdf

AOL120230V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOL1202 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 54Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.1. Size:263K aosemi
aol1240.pdf

AOL124040V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1240 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.2. Size:260K aosemi
aol1242.pdf

AOL124240V N-Channel MOSFETGeneral Description Product SummaryVDS40VThe AOL1242 uses trench MOSFET technology that isuniquely optimized to provide the most efficient high ID (at VGS=10V) 69Afrequency switching performance.Power losses are RDS(ON) (at VGS=10V)

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IRLR3715

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