AOL1408 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOL1408 datasheet

..1. Size:208K aosemi
aol1408.pdf pdf_icon

AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V) body diode characteristics. This device is ideally suited RDS(ON)

8.1. Size:352K aosemi
aol1404g.pdf pdf_icon

AOL1404G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

8.2. Size:231K aosemi
aol1404.pdf pdf_icon

AOL1404 20V N-Channel MOSFET General Description Product Summary VDS The AOL1404 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 45A extremely low RDS(ON). This device is ideal for load switch

8.3. Size:144K aosemi
aol1401.pdf pdf_icon

AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38V charge with a 25V gate rating. This device is suitable ID = -85A for use as a load switch or in PWM applications. It is RDS(ON)

Otros transistores... AOI518 , AOK18N65L , AOK20N60L , AOK20S60L , AOK22N50L , AOK27S60L , AOK42S60L , AOL1206 , IRF3205 , AOL1412 , AOL1420 , AOL1428 , AOL1436 , AOL1444 , AOL1446 , AOL1704 , AOU7S60 .