AOL1428 Todos los transistores

 

AOL1428 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOL1428

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 43 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 49 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 5.5 nS

Cossⓘ - Capacitancia de salida: 340 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0095 Ohm

Encapsulados: ULTRASO8

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AOL1428 datasheet

 ..1. Size:230K  aosemi
aol1428.pdf pdf_icon

AOL1428

AOL1428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30V is suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V) general purpose applications. RDS(ON)

 0.1. Size:240K  aosemi
aol1428a.pdf pdf_icon

AOL1428

AOL1428A 30V N-Channel MOSFET General Description Product Summary VDS The AOL1428A combines advanced trench MOSFET 30V 49A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is suitable for use as a

 8.1. Size:235K  aosemi
aol1420.pdf pdf_icon

AOL1428

AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON)

 8.2. Size:231K  aosemi
aol1426.pdf pdf_icon

AOL1428

AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This device ID = 46A (VGS = 10V) is suitable for use as a high side switch in SMPS and RDS(ON)

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