AOL1436 Todos los transistores

 ..1. Size:137K  aosemi
 aol1436.pdf

AOL1436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1436 uses advanced trench technology to VDS (V) = 25V provide excellent RDS(ON), shoot-through immunity and ID = 50A (VGS = 10V) body diode characteristics. This device is ideally suite RDS(ON)

 8.1. Size:156K  aosemi
 aol1432a.pdf

AOL1432A N-Channel SDMOSTM POWER Transistor General Description Features VDS (V) = 25V The AOL1432A is fabricated with SDMOSTM trench ID = 44A (VGS = 10V) technology that combines excellent RDS(ON) with low gate charge. The result is outstanding efficiency with RDS(ON)

 8.2. Size:140K  aosemi
 aol1432.pdf

AOL1432 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1432 uses advanced trench technology and VDS (V) =25V design to provide excellent RDS(ON) with low gate ID = 44 A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

 9.1. Size:235K  aosemi
 aol1420.pdf

AOL1420 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1420 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON)

 9.2. Size:226K  aosemi
 aol1446.pdf

AOL1446 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1446 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON)

 9.3. Size:224K  aosemi
 aol1454.pdf

AOL1454 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1454 uses advanced trench technology to provide excellent RDS(ON), low gate charge. It is ESD VDS (V) = 40V protected. This device is suitable for use as a low side ID = 50A (VGS = 10V) switch in SMPS and general purpose applications. RDS(ON)

 9.4. Size:255K  aosemi
 aol1412.pdf

AOL1412 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AOL1412 uses advanced trench technology ID (at VGS=10V) 70A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

 9.5. Size:352K  aosemi
 aol1404g.pdf

AOL1404G 20V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 20V Low RDS(ON) ID (at VGS=4.5V) 46A RoHS and Halogen-Free Compliant RDS(ON) (at VGS=4.5V)

 9.6. Size:231K  aosemi
 aol1404.pdf

AOL1404 20V N-Channel MOSFET General Description Product Summary VDS The AOL1404 combines advanced trench MOSFET 20V technology with a low resistance package to provide ID (at VGS=4.5V) 45A extremely low RDS(ON). This device is ideal for load switch

 9.7. Size:144K  aosemi
 aol1401.pdf

AOL1401 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1401 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate VDS (V) = -38V charge with a 25V gate rating. This device is suitable ID = -85A for use as a load switch or in PWM applications. It is RDS(ON)

 9.8. Size:230K  aosemi
 aol1428.pdf

AOL1428 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device VDS (V) = 30V is suitable for use as a high side switch in SMPS and ID = 45A (VGS = 10V) general purpose applications. RDS(ON)

 9.9. Size:380K  aosemi
 aol1448.pdf

AOL1448 30V N-Channel MOSFET General Description Product Summary VDS 30V The AOL1448 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 36A This device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

 9.10. Size:209K  aosemi
 aol1444.pdf

AOL1444 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1444 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V) body diode characteristics. This device is ideally RDS(ON)

 9.11. Size:256K  aosemi
 aol1458.pdf

AOL1458 30V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 30V The AOL1458 is fabricated with SDMOSTM trench ID (at VGS=10V) 46A technology that combines excellent RDS(ON) with low gate charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V)

 9.12. Size:232K  aosemi
 aol1482.pdf

AOL1482 100V N-Channel MOSFET General Description Product Summary VDS 100V The AOL1482 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 28A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 9.13. Size:138K  aosemi
 aol1413.pdf

AOL1413 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1413 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge VDS (V) = -30V with a 25V gate rating. This device is suitable for use ID = -38A (VGS = -10V) as a load switch or in PWM applications. The device is RDS(ON)

 9.14. Size:231K  aosemi
 aol1426.pdf

AOL1426 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1426 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This device ID = 46A (VGS = 10V) is suitable for use as a high side switch in SMPS and RDS(ON)

 9.15. Size:208K  aosemi
 aol1408.pdf

AOL1408 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1408 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), shoot-through immunity and ID = 85A (VGS = 10V) body diode characteristics. This device is ideally suited RDS(ON)

 9.16. Size:370K  aosemi
 aol1454g.pdf

AOL1454G TM 40V N-Channel AlphaSGT General Description Product Summary VDS 40V Trench Power AlphaSGTTM technology ID (at VGS=10V) 46A Low RDS(ON) Logic Level Driving RDS(ON) (at VGS=10V)

 9.17. Size:170K  aosemi
 aol1414.pdf

AOL1414 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOL1414 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate chargeand low ID = 85A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON)

 9.18. Size:240K  aosemi
 aol1428a.pdf

AOL1428A 30V N-Channel MOSFET General Description Product Summary VDS The AOL1428A combines advanced trench MOSFET 30V 49A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is suitable for use as a