AOD4184 Todos los transistores

Introduzca al menos 3 números o letras

AOD4184 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AOD4184

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 50 W

Tensión drenaje-fuente (Vds): 40 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 50 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 17.2 nS

Conductancia de drenaje-sustrato (Cd): 215 pF

Resistencia drenaje-fuente RDS(on): 0.008 Ohm

Empaquetado / Estuche: TO252

Búsqueda de reemplazo de MOSFET AOD4184

 

AOD4184 Datasheet (PDF)

1.1. aod4184.pdf Size:287K _aosemi

AOD4184
AOD4184

AOD4184/AOI4184 40V N-Channel MOSFET General Description Product Summary VDS The AOD4184/AOI4184 used advanced trench technology 40V 50A and design to provide excellent RDS(ON) with low gate ID (at VGS=10V) charge. With the excellent thermal resistance of the DPAK < 8mΩ RDS(ON) (at VGS=10V) package, those devices are well suited for high current < 11mΩ RDS(ON) (at VGS = 4.5

1.2. aod4184a.pdf Size:232K _aosemi

AOD4184
AOD4184

AOD4184A 40V N-Channel MOSFET General Description Product Summary VDS The AOD4184A combines advanced trench MOSFET 40V 50A technology with a low resistance package to provide ID (at VGS=10V) extremely low RDS(ON). This device is well suited for high < 7mΩ RDS(ON) (at VGS=10V) current load applications. < 9.5mΩ RDS(ON) (at VGS = 4.5V) 100% UIS Tested 100% Rg Tested TO252

4.1. aod4185.pdf Size:269K _aosemi

AOD4184
AOD4184

AOD4185/AOI4185 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4185/AOI4185 uses advanced trench VDS (V) = -40V technology to provide excellent RDS(ON) and low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON) < 15mΩ (VGS = -10V) DPAK/IPAK package, this device is well suited for high RDS(ON) < 20mΩ (VGS

4.2. aod4182.pdf Size:262K _aosemi

AOD4184
AOD4184

AOD4182 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AOD4182 is fabricated with SDMOSTM trench ID (at VGS=10V) 53A technology that combines excellent RDS(ON) with low gate < 15.5mΩ charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) with controlled switching behavior. This universal < 20mΩ RDS(ON) (at VGS=7V) te

4.3. aod4187.pdf Size:142K _aosemi

AOD4184
AOD4184

AOD4187 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4187 uses advanced trench technology and VDS (V) = -40V design to provide excellent RDS(ON) with low gate charge. ID = -45A (VGS = -10V) With the excellent thermal resistance of the DPAK RDS(ON) < 17mΩ (VGS = -10V) package, this device is well suited for high current load RDS(ON) < 23mΩ (

4.4. aod4186.pdf Size:148K _aosemi

AOD4184
AOD4184

AOD4186 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4186 combines advanced trench MOSFET technology with a low resistance package to provide VDS (V) =40V extremely low RDS(ON). This device is ideal for low (VGS = 10V) ID = 35A voltage inverter applications. (VGS = 10V) RDS(ON) < 15mΩ (VGS = 4.5V) RDS(ON) < 19mΩ - RoHS Compliant 1

4.5. aod4189.pdf Size:214K _aosemi

AOD4184
AOD4184

AOD4189 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD4189 uses advanced trench technology and VDS (V) = -40V design to provide excellent RDS(ON) with low gate ID = -40A (VGS = -10V) charge. With the excellent thermal resistance of the RDS(ON) < 22mΩ (VGS = -10V) DPAK package, this device is well suited for high RDS(ON) < 29mΩ (VGS = -4.5V)

4.6. aod4180.pdf Size:263K _aosemi

AOD4184
AOD4184

AOD4180 80V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 80V The AOD4180 is fabricated with SDMOSTM trench 54A ID (at VGS=10V) technology that combines excellent RDS(ON) with low gate < 14mΩ charge and low Qrr.The result is outstanding efficiency RDS(ON) (at VGS=10V) with controlled switching behavior. This universal < 18mΩ RDS(ON) (at VGS = 7V) t

4.7. aod418.pdf Size:280K _aosemi

AOD4184
AOD4184

AOD418/AOI418 30V N-Channel MOSFET General Description Product Summary VDS The AOD418/AOI418 uses advanced trench technology to 30V 36A provide excellent RDS(ON), low gate charge and low gate ID (at VGS= 10V) resistance. With the excellent thermal resistance of the < 7.5mΩ RDS(ON) (at VGS= 10V) DPAK/IPAK package, this device is well suited for high < 11mΩ RDS(ON) (at VGS =

Otros transistores... AOL1436 , AOL1444 , AOL1446 , AOL1704 , AOU7S60 , AOWF240 , AOWF7S60 , AOD414 , IRF530 , AOD4187 , AOD4191L , AOD420 , AOD448 , AOD454 , AOD456A , AOD460 , AOD466 .

 


AOD4184
  AOD4184
  AOD4184
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: IRLL2703PBF | IRLL110TRPBF | IRLL024ZPBF | IRLL024NPBF | IRLL014PBF | IRLL014NPBF | IRLL3303PBF | IRLL2705PBF | IRF200B211 | IRF1902PBF | IRF1704 | IRF1607PBF | IRF150SMD | IRF150C | IRF150B |

Introduzca al menos 1 números o letras