AOD472 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOD472
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 150 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 25 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 55 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 26 nC
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 485 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm
   Paquete / Cubierta: TO252

Búsqueda de reemplazo de MOSFET AOD472

AOD472 Datasheet (PDF)

..1. Size:145K aosemi
aod472.pdf

AOD472N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD472 uses advanced trench technology and VDS (V) = 25Vdesign to provide excellent RDS(ON) with low gate ID = 55A (VGS = 10V) charge. This device is suitable for use in PWM, load RDS(ON)

..2. Size:789K cn vbsemi
aod472.pdf

AOD472www.VBsemi.twN-Channel 20-V (D-S)175 _C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested 0.006 @ VGS = 4.5 V 6520200.008 @ VGS = 2.5 V 45DTO-252GDrain Connected to TabG D STop View SN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Paramet

0.1. Size:154K aosemi
aod472a.pdf

AOD472AN-Channel SDMOSTM POWER TransistorGeneral Description FeaturesVDS (V) = 25VThe AOD472A is fabricated with SDMOSTM trench ID = 55A (VGS = 10V)technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON)

9.1. Size:289K aosemi
aod474b.pdf

AOD474B75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474B combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

9.2. Size:422K aosemi
aod478 aoi478.pdf

AOD478/AOI478100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD478/AOI478 combines advanced trenchMOSFET technology with a low resistance package to ID (at VGS=10V) 11Aprovide extremely low RDS(ON). This device is ideal for RDS(ON) (at VGS=10V)

9.3. Size:208K aosemi
aod476.pdf

AOD476N-Channel Enhancement Mode Field Effect Transistor1.4General Description FeaturesThe AOD476 uses advanced trench technology and VDS (V) = 20Vdesign to provide excellent RDS(ON) with low gateID = 25A (VGS = 10V)charge. This device is suitable for use in PWM, loadRDS(ON)

9.4. Size:290K aosemi
aod474.pdf

AOD47475V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474 combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

9.5. Size:422K aosemi
aod478.pdf

9.6. Size:288K aosemi
aod474a.pdf

AOD474A75V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOD474A combines advanced trench MOSFET 75Vtechnology with a low resistance package to provide ID (at VGS=10V) 10Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

9.7. Size:265K inchange semiconductor
aod476.pdf

isc N-Channel MOSFET Transistor AOD476FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =20V(Min)DSSStatic Drain-Source On-Resistance: R = 21m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

9.8. Size:265K inchange semiconductor
aod474.pdf

isc N-Channel MOSFET Transistor AOD474FEATURESDrain Current I = 10A@ T =25D CDrain Source Voltage-: V =75V(Min)DSSStatic Drain-Source On-Resistance: R = 130m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

9.9. Size:265K inchange semiconductor
aod478.pdf

isc N-Channel MOSFET Transistor AOD478FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

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