AOD490 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOD490N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesThe AOD490 uses advanced trench technology with amonolithically integrated Schottky diode to provide VDS (V) = 30Vexcellent RDS(ON),and low gate charge. This device isID =40A (VGS = 10V)suitable for use as a low side FET in SMPS, loadRDS(ON)

AOD496A30V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AOD496A uses advanced trench technology toprovide excellent RDS(ON) with low gate charge. ID (at VGS=10V) 57AThis device is suitable for high side switch in SMPS and RDS(ON) (at VGS=10V)

AOD492N-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesTMSRFET AOD492 uses advanced trench technologyVDS (V) = 30Vwith a monolithically integrated Schottky diode toID =85A (VGS = 10V)provide excellent RDS(ON),and low gate charge. Thisdevice is suitable for use as a low side FET in SMPS, RDS(ON)

AOD498100V N-Channel MOSFETGeneral Description Product SummaryVDS100VThe AOD498 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS=10V) 11Aextremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

AOD496N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD496 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device VDS (V) = 30Vis suitable for use as a high side switch in SMPS and ID = 62A (VGS = 10V)general purpose applications.RDS(ON)

AOD492www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLU

isc N-Channel MOSFET Transistor AOD496AFEATURESDrain Current I = 57A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 9m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

isc N-Channel MOSFET Transistor AOD492FEATURESDrain Current I = 85A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOD498FEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 140m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

isc N-Channel MOSFET Transistor AOD496FEATURESStatic drain-source on-resistance:RDS(on)9.5m100% avalanche testedMinimum Lot-to-Lot variations for robust device213performance and reliable operationAPPLICATIONSBe suitable for use as a high side switch in SMPS andgeneral purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE