2SK2209-01R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2209-01R
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 80 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   trⓘ - Tiempo de subida: 70 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.48 Ohm
   Paquete / Cubierta: TO3PF

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2SK2209-01R Datasheet (PDF)

..1. Size:159K fuji
2sk2209-01r.pdf

8.1. Size:34K 1
2sk2208.pdf

2SK2208External dimensions 2 ...... FM100Absolute Maximum Ratings Electrical Characteristics(Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 900 V V 900 V I = 100A, V = 0VDSS (BR) DSS D GSV 30 V I 100 nA V = 30VGSS GSS GSI 5I 100 A V = 900V, V = 0VD A DSS DS GSI 20 A V 2.0 3.0 4.0 V V = 10V, I = 1mAD (pulse) TH DS

8.2. Size:422K toshiba
2sk2201.pdf

2SK2201 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2201 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance

8.3. Size:412K toshiba
2sk2200.pdf

2SK2200 2 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L --MOSV) 2SK2200 Chopper Regulator, DC-DC Converter and Motor Drive Unit: mm Applications 4 V gate drive Low drain-source ON resistance : R = 0.28 (typ.) DS (ON) High forward transfer admittance : |Y | = 3.5 S (typ.) fs Low leakage current : IDSS = 100 A (max) (V = 100 V) DS Enhance

8.4. Size:95K renesas
rej03g1002 2sk2202ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

8.5. Size:81K renesas
2sk2202.pdf

2SK2202 Silicon N Channel MOS FET REJ03G1002-0300 (Previous: ADE-208-139) Rev.3.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for switching regulator, DC-DC converter Outline RENESAS Package code: PRSS0003AD-A

8.6. Size:35K no
2sk2207.pdf

2SK2207External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 900 V V 900 V I = 100A, V = 0VDSS (BR) DSS D GSV 30 V I 100 nA V = 30VGSS GSS GSI 3I 100 A V = 900V, V = 0VD A DSS DS GSI 12 A V 2.0 3.0 4.0 V V = 10V, I = 1mAD (pulse) TH DS

Otros transistores... IRF830AS , IRF830FI , IRF830S , IRF831 , IRF831FI , IRF832 , IRF833 , IRF840 , IRF9640 , IRF840A , IRF840AS , IRF840FI , IRF840S , IRF841 , IRF841FI , IRF842 , IRF843 .

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