AOT400 Todos los transistores

 

AOT400 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: AOT400
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 75 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 41 nS
   Cossⓘ - Capacitancia de salida: 1060 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0047 Ohm
   Paquete / Cubierta: TO220
 

 Búsqueda de reemplazo de AOT400 MOSFET

   - Selección ⓘ de transistores por parámetros

 

AOT400 Datasheet (PDF)

 ..1. Size:67K  aosemi
aot400.pdf pdf_icon

AOT400

AOT400N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT400 uses advanced trench technology and VDS (V) = 75Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

 9.1. Size:66K  aosemi
aot402.pdf pdf_icon

AOT400

AOT402N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT402 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 110 A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

 9.2. Size:109K  aosemi
aot404.pdf pdf_icon

AOT400

AOT404N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT404 uses advanced trench technology and VDS (V) = 105Vdesign to provide excellent RDS(ON) with low gate ID = 40 A (VGS =10V)charge. This device is suitable for use in high voltage RDS(ON)

 9.3. Size:261K  inchange semiconductor
aot404.pdf pdf_icon

AOT400

isc N-Channel MOSFET Transistor AOT404FEATURESDrain Current I = 40A@ T =25D CDrain Source Voltage-: V = 105V(Min)DSSStatic Drain-Source On-Resistance: R = 28m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

Otros transistores... AOTF11S65L , AOTF15S60L , AOTF15S65L , AOTF18N65L , AOTF20S60L , AOTF298L , AOTF7S60 , AOTF7S60L , SPP20N60C3 , AOT402 , AOT426 , AOT428 , AOT42S60L , AOT462 , AOT4S60L , AOT7S60L , AOT7S65L .

History: IRFW644A

 

 
Back to Top

 


 
.