AOT42S60L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AOT42S60/AOTF42S60TM600V 39A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOTF42S60 have been fabricated IDM 166Ausing the advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.099robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Q

AOT42S60/AOB42S60TM600V 37A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 700VThe AOT42S60 & AOB42S60 have been fabricated using IDM 166Athe advanced MOSTM high voltage process that isdesigned to deliver high levels of performance and RDS(ON),max 0.109robustness in switching applications. Qg,typ 40nCBy providing low RDS(on), Qg and EOSS alo

isc N-Channel MOSFET Transistor AOT42S60FEATURESDrain Current I = 37A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 109m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONBe suitable for synchronous rectification for server andgen

AOT424N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT424 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and lowID = 110A (VGS = 10V)gate resistance. This device is ideally suited for use asRDS(ON)

AOT428N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT428 uses advanced trench technology and VDS (V) = 75Vdesign to provide excellent RDS(ON) with low gate ID = 80A (VGS = 10V)charge. This device is suitable for use in PWM, load RDS(ON)

AOT426N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOT426 uses advanced trench technology and VDS (V) = 30Vdesign to provide excellent RDS(ON) with low gate ID = 85Acharge. This device is suitable for use in PWM, load RDS(ON)

AOT424www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0035 at VGS = 10 V 9830 82 nC0.0045 at VGS = 4.5 V 98APPLICATIONS OR-ingTO-220ABD Server DC/DCGSG D S N-Channel MOSFETTop ViewABSOL

isc N-Channel MOSFET Transistor AOT424FEATURESDrain Current I = 110A@ T =25D CDrain Source Voltage-: V =30V(Min)DSSStatic Drain-Source On-Resistance: R = 4m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a