AON5800 Todos los transistores

 

AON5800 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON5800

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 8 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 11 nS

Cossⓘ - Capacitancia de salida: 182 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm

Encapsulados: DFN2X5

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AON5800 datasheet

 ..1. Size:127K  aosemi
 aon5800.pdf pdf_icon

AON5800

AON5800 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5800 uses advanced trench technology to VDS (V) = 20V provide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V) operation with gate voltages as low as 1.8V while RDS(ON)

 8.1. Size:117K  aosemi
 aon5802a.pdf pdf_icon

AON5800

AON5802A, AON5802AL Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802A uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

 8.2. Size:120K  aosemi
 aon5802.pdf pdf_icon

AON5800

AON5802 Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features The AON5802 uses advanced trench technology to provide VDS (V) = 30V excellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V) voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is RDS(ON)

 8.3. Size:269K  aosemi
 aon5802b.pdf pdf_icon

AON5800

AON5802B 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary VDS The AON5802B uses advanced trench technology to 30V provide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2A with gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

MOSTRAR MÁS

Otros transistores... AON3406 , AON3408 , AON3702 , AON4407 , AON4413 , AON4420 , AON4602 , AON4701 , TK10A60D , AON5802A , AOT11S60L , AOT11S65L , AOT15S60L , AOT15S65 , AOT15S65L , AOT20N25L , AOT20N60L .

History: MVSF2N02EL

 

 

 

 

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