AON5800 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AON5800
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 8 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1 V
   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 182 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.016 Ohm
   Paquete / Cubierta: DFN2X5

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AON5800 Datasheet (PDF)

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aon5800.pdf

AON5800Common-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AON5800 uses advanced trench technology to VDS (V) = 20Vprovide excellent RDS(ON), low gate charge and ID = 8 A (VGS = 10V)operation with gate voltages as low as 1.8V while RDS(ON)

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aon5802a.pdf

AON5802A, AON5802ALCommon-Drain Dual N-Channel Enhancement Mode Field Effect TransistorGeneral DescriptionFeaturesThe AON5802A uses advanced trench technology to provide VDS (V) = 30Vexcellent RDS(ON), low gate charge and operation with gate ID = 7.2A (VGS = 4.5V)voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for u

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aon5802b.pdf

AON5802B30V Common-Drain Dual N-Channel MOSFETGeneral Description Product SummaryVDSThe AON5802B uses advanced trench technology to 30Vprovide excellent RDS(ON), low gate charge and operation ID (at VGS=4.5V) 7.2Awith gate voltages as low as 2.5V while retaining a 12V RDS(ON) (at VGS=4.5V)

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aon5802bg.pdf

AON5802BG30V Dual N-Channel MOSFETGeneral Description Product SummaryVDS Low RDS(ON) 30V With ESD Protection to improve battery performance ID (at VGS=12V) 10A and safety RDS(ON) (at VGS=4.5V)

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