AOT25S65L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: AOT25S65L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 357 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 26.4 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 87 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.19 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET AOT25S65L

AOT25S65L Datasheet (PDF)

..1. Size:311K aosemi
aot25s65l.pdf

AOT25S65/AOB25S65/AOTF25S65TM650V 25A MOS Power TransistorGeneral Description Product Summary VDS @ Tj,max 750VThe AOT25S65 & AOB25S65 & AOTF25S65 have beenfabricated using the advanced MOSTM high voltage IDM 104Aprocess that is designed to deliver high levels of RDS(ON),max 0.19performance and robustness in switching applications. Qg,typ 26.4nCBy provi

6.1. Size:311K aosemi
aot25s65.pdf

6.2. Size:260K inchange semiconductor
aot25s65.pdf

isc N-Channel MOSFET Transistor AOT25S65FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 0.19(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.1. Size:636K aosemi
aot2502l aob2502l.pdf

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

9.2. Size:297K aosemi
aot2500l.pdf

AOT2500L/AOB2500L150V N-Channel MOSFETGeneral Description Product SummaryVDSThe AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152Atechnology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

9.3. Size:334K aosemi
aot2502l.pdf

AOT2502L/AOB2502L150V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

9.4. Size:306K aosemi
aot254l.pdf

AOT254L/AOB254L150V N-Channel MOSFETGeneral Description Product SummaryVDS150VThe AOT254L/AOB254L uses Trench MOSFETtechnology that is uniquely optimized to provide the most ID (at VGS=10V) 32Aefficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

9.5. Size:259K inchange semiconductor
aot2500l.pdf

isc N-Channel MOSFET Transistor AOT2500LFEATURESDrain Current I = 152A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

9.6. Size:259K inchange semiconductor
aot2502l.pdf

isc N-Channel MOSFET Transistor AOT2502LFEATURESDrain Current I = 106A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 11m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

9.7. Size:259K inchange semiconductor
aot254l.pdf

isc N-Channel MOSFET Transistor AOT254LFEATURESDrain Current I = 32A@ T =25D CDrain Source Voltage-: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R = 46m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpos

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