AON7202 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AON7202 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON7202

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 36 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 40 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 7 nS

Cossⓘ - Capacitancia de salida: 720 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm

Encapsulados: DFN3X3

Búsqueda de reemplazo de AON7202 MOSFET

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AON7202 datasheet

..1. Size:229K aosemi
aon7202.pdf pdf_icon

AON7202 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7202 uses Trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance. Power losses are RDS(ON) (at VGS=10V)

8.1. Size:221K aosemi
aon7200.pdf pdf_icon

AON7200 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON7200 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance. Conduction and RDS(ON) (at VGS=10V)

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aon7264e.pdf pdf_icon

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aon7254.pdf pdf_icon

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aon7262e.pdf pdf_icon

AON7262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.4. Size:263K 1
aon7296.pdf pdf_icon

AON7296 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7296 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 12.5A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.5. Size:461K 1
aon7244.pdf pdf_icon

AON7244 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7244 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 50A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

9.6. Size:330K aosemi
aon7232.pdf pdf_icon

AON7232 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET Technology 100V Low RDS(ON) ID (at VGS=10V) 37A Low Gate Charge RDS(ON) (at VGS=10V)

9.7. Size:348K aosemi
aon7264e.pdf pdf_icon

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aon7254.pdf pdf_icon

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aon7242.pdf pdf_icon

AON7242 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7242 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.10. Size:337K aosemi
aon7262e.pdf pdf_icon

AON7262E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 34A Low RDS(ON) Low Gate Charge RDS(ON) (at VGS=10V)

9.11. Size:272K aosemi
aon7246.pdf pdf_icon

AON7246 60V N-Channel MOSFET General Description Product Summary VDS 60V The AON7246 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 34.5A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

9.12. Size:388K aosemi
aon7220.pdf pdf_icon

AON7220 25V N-Channel MOSFET General Description Product Summary VDS 25V The AON7220 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.13. Size:563K aosemi
aon7264c.pdf pdf_icon

AON7264C TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

9.14. Size:270K aosemi
aon7280.pdf pdf_icon

AON7280 80V N-Channel MOSFET General Description Product Summary VDS The AON7280 uses trench MOSFET technology that is 80V uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

9.15. Size:239K aosemi
aon7210.pdf pdf_icon

AON7210 30V N-Channel MOSFET General Description Product Summary VDS The AON7210 uses trench MOSFET technology that is 30V 50A uniquely optimized to provide the most efficient high ID (at VGS=10V) frequency switching performance.Power losses are

9.16. Size:151K aosemi
aon7240.pdf pdf_icon

AON7240 40V N-Channel MOSFET General Description Product Summary VDS 40V The AON7240 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 40A frequency switching performance.Power losses are RDS(ON) (at VGS=10V)

9.17. Size:332K aosemi
aon7230.pdf pdf_icon

AON7230 100V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 100V Low RDS(ON) ID (at VGS=10V) 47A Low Gate Charge RDS(ON) (at VGS=10V)

9.18. Size:267K aosemi
aon7290.pdf pdf_icon

AON7290 100V N-Channel MOSFET General Description Product Summary VDS 100V The AON7290 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high ID (at VGS=10V) 50A frequency switching performance. Both conduction and RDS(ON) (at VGS=10V)

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aon7244.pdf pdf_icon

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aon7246e.pdf pdf_icon

AON7246E TM 60V N-Channel AlphaSGT General Description Product Summary VDS 60V Trench Power AlphaSGTTM technology ID (at VGS=10V) 24A Low RDS(ON) Logic Level Gate Drive RDS(ON) (at VGS=10V)

9.22. Size:259K aosemi
aon7292.pdf pdf_icon