AON6408 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6408
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 25 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.5 nS
Cossⓘ - Capacitancia de salida: 240 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0065 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6408 MOSFET
AON6408 Datasheet (PDF)
aon6408.pdf

AON640830V N-Channel MOSFETGeneral Description Product SummaryThe AON6408 combines advanced trench MOSFETVDS (V) = 30Vtechnology with a low resistance package to provideID = 25A (VGS = 10V)extremely low RDS(ON). This device is for PWMRDS(ON)
aon6407.pdf

AON640730V P-Channel MOSFETGeneral Description Product SummaryVDSThe AON6407 combines advanced trench MOSFET -30technology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
aon6404.pdf

AON640430V N-Channel MOSFETGeneral Description Product SummaryThe AON6404 combines advanced trench MOSFET VDS (V) = 30Vtechnology with a low resistance package to provideID = 85A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6403.pdf

AON640330V P-Channel MOSFETGeneral Description Product SummaryVDS -30VThe AON6403 combines advanced trench MOSFETtechnology with a low resistance package to provide ID (at VGS= -10V) -85Aextremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V)
Otros transistores... AON6934 , AON6974 , AON7202 , AON7422L , AON7514 , AON7702 , AON6200 , AON6206 , MMIS60R580P , AON6410 , AON6414 , AON6414AL , AON6418 , AON6422 , AON6454 , AON6514 , AON6534 .



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