AON6408 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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AON6408 Datasheet (PDF)

1.1. aon6408.pdf Size:151K _aosemi

AON6408 30V N-Channel MOSFET General Description Product Summary The AON6408 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 25A (VGS = 10V) extremely low RDS(ON). This device is for PWM RDS(ON) < 6.5mΩ (VGS = 10V) applications. RDS(ON) < 9.5mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN5X6 D Top View Top View Bot

4.1. aon6404.pdf Size:159K _aosemi

AON6404 30V N-Channel MOSFET General Description Product Summary The AON6404 combines advanced trench MOSFET VDS (V) = 30V technology with a low resistance package to provide ID = 85A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON) < 2.2mΩ (VGS = 10V) switch and battery protection applications. RDS(ON) < 3.8mΩ (VGS = 4.5V) ESD protected 100% UIS Tested

4.2. aon6404a.pdf Size:189K _aosemi

AON6404A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6404A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 2.3mΩ and battery protection applications. RDS(ON) (at VGS=4.5V) < 3.0mΩ ESD protected 100% UIS Tested

 4.3. aon6400.pdf Size:226K _aosemi

AON6400 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6400 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 1.4mΩ and battery protection applications. RDS(ON) (at VGS = 4.5V) < 1.8mΩ 100% UIS Tested 100% Rg Tested

4.4. aon6407.pdf Size:262K _aosemi

AON6407 30V P-Channel MOSFET General Description Product Summary VDS The AON6407 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) < 4.5mΩ and battery protection applications. RDS(ON) (at VGS = -6V) < 6.0mΩ 100% UIS Tested 100% Rg Tes

 4.5. aon6403.pdf Size:231K _aosemi

AON6403 30V P-Channel MOSFET General Description Product Summary VDS -30V The AON6403 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) < 3.1mΩ and battery protection applications. RDS(ON) (at VGS = -4.5V) < 4.3mΩ 100% UIS Tested 100% Rg

4.6. aon6406.pdf Size:245K _aosemi

AON6406 30V N-Channel MOSFET General Description Product Summary VDS 30V • Latest Trench Power LV technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 170A • Low Gate Charge RDS(ON) (at VGS=10V) < 2.3mΩ • High Current Capability RDS(ON) (at VGS=4.5V) < 3.5mΩ • RoHS and Halogen-Free Compliant ESD protected Application 100% UIS Tested • DC/DC Converters in C

4.7. aon6405.pdf Size:245K _aosemi

AON6405 30V P-Channel MOSFET General Description Product Summary VDS The AON6405 combines advanced trench MOSFET -30 technology with a low resistance package to provide ID (at VGS= -10V) -30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) < 7mΩ and battery protection applications. RDS(ON) (at VGS = -4.5V) < 8mΩ ESD Protected 100% UIS Tested

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Recientemente añadidas las descripciónes de los transistores:

MOSFET: GSM4422 | GSM4412W | GSM4412 | GSM4403 | GSM4401S | GSM4248W | GSM4228 | GSM4214W | GSM4214 | GSM4210W | GSM4210 | GSM4172WS | GSM4172S | GSM4134W | GSM4134 |