AON6418 Todos los transistores

 

AON6418 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6418

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 25 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 32 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 1.8 V

Tiempo de elevación (tr): 4.8 nS

Conductancia de drenaje-sustrato (Cd): 526 pF

Resistencia drenaje-fuente RDS(on): 0.005 Ohm

Empaquetado / Estuche: DFN5X6EP

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AON6418 Datasheet (PDF)

1.1. aon6418.pdf Size:306K _aosemi

AON6418
AON6418

AON6418 30V N-Channel AlphaMOS General Description Product Summary VDS 30V • Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(on) at 4.5VGS ID (at VGS=10V) 32A • Low Gate Charge RDS(ON) (at VGS=10V) < 5mΩ • High Current Capability RDS(ON) (at VGS = 4.5V) < 8mΩ • RoHS and Halogen-Free Compliant Application 100% UIS Tested • DC/DC Converters in Co

4.1. aon6414.pdf Size:156K _aosemi

AON6418
AON6418

AON6414 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 30A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS=10V) < 10.5mΩ and battery protection applications. RDS(ON) (at VGS = 4.5V) < 17mΩ 100% UIS Tested 100% Rg Tested

4.2. aon6416.pdf Size:268K _aosemi

AON6418
AON6418

AON6416 30V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 30V The AON6416 is fabricated with SDMOSTM trench ID (at VGS=10V) 22A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V) < 8mΩ switching behavior. This universal technology is well RDS(ON) (at VGS = 4.5V) < 14mΩ

 4.3. aon6414a.pdf Size:268K _aosemi

AON6418
AON6418

AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 30A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) < 8mΩ general purpose applications. RDS(ON) (at VGS=4.5V) < 10.5mΩ 100% UIS Tested 100% Rg Tested D DFN

4.4. aon6414al.pdf Size:384K _aosemi

AON6418
AON6418

AON6414A 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6414A uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 50A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) < 8mΩ general purpose applications. RDS(ON) (at VGS=4.5V) < 10.5mΩ 100% UIS Tested 100% Rg Tested D D

 4.5. aon6410.pdf Size:158K _aosemi

AON6418
AON6418

AON6410 30V N-Channel MOSFET General Description Product Summary The AON6410 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 24A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON) < 12mΩ (VGS = 10V) SMPS and general purpose applications. RDS(ON) < 14mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN5X6 D

4.6. aon6413.pdf Size:278K _aosemi

AON6418
AON6418

AON6413 30V P-Channel MOSFET General Description Product Summary VDS • Latest Trench Power MOSFET technology -30V • Very Low RDS(ON) at 4.5V VGS ID (at VGS=-10V) -32A • Low Gate Charge RDS(ON) (at VGS=-10V) < 8.5mΩ • High Current Capability RDS(ON) (at VGS=-4.5V) < 17mΩ • RoHS and Halogen-Free Compliant Typical ESD protection HBM Class 3A Application 100% UIS Tested

4.7. aon6411.pdf Size:262K _aosemi

AON6418
AON6418

AON6411 20V P-Channel MOSFET General Description Product Summary VDS -20 The AON6411 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS= -10V) -85A extremely low RDS(ON). This device is ideal for load switch RDS(ON) (at VGS= -10V) < 2.1mΩ and battery protection applications. RDS(ON) (at VGS =-4.5V) < 2.5mΩ RDS(ON) (at VGS =-2.5V) <

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