AON6422 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: AON6422

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 83 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 9.8 nS

Conductancia de drenaje-sustrato (Cd): 760 pF

Resistencia drenaje-fuente RDS(on): 0.0045 Ohm

Empaquetado / Estuche: DFN5X6EP

Búsqueda de reemplazo de MOSFET AON6422

AON6422 Datasheet (PDF)

1.1. aon6422.pdf Size:155K _aosemi

AON6422 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6422 combines advanced trench MOSFET technology with a low resistance package to provide ID = 80A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON) < 4.5mΩ (VGS = 10V) switch and battery protection applications. RDS(ON) < 6.9mΩ (VGS = 4.5V) ESD protected 100% UIS Tested

4.1. aon6428.pdf Size:301K _aosemi

AON6428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) < 10mΩ general purpose applications. RDS(ON) (at VGS= 4.5V) < 14.5mΩ 100% UIS Tested 100% Rg Tested D D

4.2. aon6424.pdf Size:390K _aosemi

AON6424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6424 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V) < 8.5mΩ general purpose applications. RDS(ON) (at VGS = 4.5V) < 10mΩ 100% UIS Tested 100% Rg Tested D D

4.3. aon6426.pdf Size:149K _aosemi

AON6426 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide ID = 65A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON) < 5.5mΩ (VGS = 10V) switch and battery protection applications. RDS(ON) < 7.5mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Test

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

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