AON6422 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6422 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.8 nS
Cossⓘ - Capacitancia de salida: 760 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Encapsulados: DFN5X6
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AON6422 datasheet
aon6422.pdf
AON6422 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6422 combines advanced trench MOSFET technology with a low resistance package to provide ID = 80A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)
aon6424.pdf
AON6424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6424 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6426.pdf
AON6426 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide ID = 65A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)
aon6428.pdf
AON6428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
Otros transistores... AON7702, AON6200, AON6206, AON6408, AON6410, AON6414, AON6414AL, AON6418, 8N60, AON6454, AON6514, AON6534, AON6542, AON6702, AON6704A, AON6708, AON6710
Parámetros del MOSFET. Cómo se afectan entre sí.
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