AON6422 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6422
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 83 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 80 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.3 V
Tiempo de subida (tr): 9.8 nS
Conductancia de drenaje-sustrato (Cd): 760 pF
Resistencia entre drenaje y fuente RDS(on): 0.0045 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de MOSFET AON6422
AON6422 Datasheet (PDF)
aon6422.pdf
AON642230V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6422 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 80A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6424.pdf
AON642430V N-Channel MOSFETGeneral Description Product SummaryVDS30VThe AON6424 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6426.pdf
AON642630V N-Channel MOSFETGeneral Description Product SummaryVDS (V) = 30VThe AON6426 combines advanced trench MOSFETtechnology with a low resistance package to provideID = 65A (VGS = 10V)extremely low RDS(ON). This device is ideal for loadRDS(ON)
aon6428.pdf
AON642830V N-Channel MOSFET General Description Product SummaryVDS30VThe AON6428 uses advanced trench technology toprovide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43Asuitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
