AON6422 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6422
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 80 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 9.8 nS
Cossⓘ - Capacitancia de salida: 760 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de AON6422 MOSFET
AON6422 datasheet
aon6422.pdf
AON6422 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6422 combines advanced trench MOSFET technology with a low resistance package to provide ID = 80A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)
aon6424.pdf
AON6424 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6424 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 41A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
aon6426.pdf
AON6426 30V N-Channel MOSFET General Description Product Summary VDS (V) = 30V The AON6426 combines advanced trench MOSFET technology with a low resistance package to provide ID = 65A (VGS = 10V) extremely low RDS(ON). This device is ideal for load RDS(ON)
aon6428.pdf
AON6428 30V N-Channel MOSFET General Description Product Summary VDS 30V The AON6428 uses advanced trench technology to provide excellent RDS(ON), low gate charge.This device is ID (at VGS=10V) 43A suitable for use as a high side switch in SMPS and RDS(ON) (at VGS=10V)
Otros transistores... AON7702 , AON6200 , AON6206 , AON6408 , AON6410 , AON6414 , AON6414AL , AON6418 , IRF9640 , AON6454 , AON6514 , AON6534 , AON6542 , AON6702 , AON6704A , AON6708 , AON6710 .
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