AON6454 Todos los transistores

 ..1. Size:239K  aosemi
 aon6454.pdf

AON6454 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454 combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 10A extremely low RDS(ON). This device is ideal for boost RDS(ON) (at VGS=10V)

 0.1. Size:251K  aosemi
 aon6454a.pdf

AON6454A 150V N-Channel MOSFET General Description Product Summary VDS 150V The AON6454A combines advanced trench MOSFET technology with a low resistance package to provide ID (at VGS=10V) 31A extremely low RDS(ON).This device is ideal for boost RDS(ON) (at VGS=10V)

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 aon6450.pdf

AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.2. Size:562K  aosemi
 aon6458.pdf

AON6458 250V,14A N-Channel MOSFET General Description Product Summary The AON6458 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of VDS 300V@150 performance and robustness in popular AC-DC ID (at VGS=10V) 14A applications.By providing low RDS(on), Ciss and Crss along with RDS(ON) (at VGS=10V)

 8.3. Size:274K  aosemi
 aon6450.pdf

AON6450 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6450 is fabricated with SDMOSTM trench ID (at VGS=10V) 52A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)

 8.4. Size:399K  aosemi
 aon6452.pdf

AON6452 100V N-Channel MOSFET TM SDMOS General Description Product Summary VDS 100V The AON6452 is fabricated with SDMOSTM trench ID (at VGS=10V) 26A technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled RDS(ON) (at VGS=10V)