AON6702 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6702 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 83 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 11 nS
Cossⓘ - Capacitancia de salida: 1100 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm
Encapsulados: DFN5X6
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AON6702 datasheet
..1. Size:269K aosemi
aon6702.pdf 
AON6702 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6702 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
8.1. Size:155K aosemi
aon6708.pdf
AON6708 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM The AON6708 uses advanced trench ID = 30A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate RDS(ON)
8.2. Size:257K aosemi
aon6704a.pdf
AON6704A 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6704A uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
9.1. Size:268K 1
aon6786.pdf
AON6786 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6786 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.2. Size:262K 1
aon6790.pdf
AON6790 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6790 uses advanced trench technology 68A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
9.3. Size:331K aosemi
aon6792.pdf
AON6792 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.4. Size:301K aosemi
aon6774.pdf
AON6774 30V N-Channel AlphaMOS General Description Product Summary VDS Latest Trench Power AlphaMOS ( MOS LV) technology 30V Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
9.5. Size:243K aosemi
aon6794.pdf
AON6794 30V N-Channel SRFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.6. Size:153K aosemi
aon6718l.pdf
AON6718L N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features SRFETTM AON6718L uses advanced trench technology VDS (V) = 30V with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ID = 80A (VGS = 10V) ideally suited for use as a low side switch in CPU core RDS(ON)
9.7. Size:354K aosemi
aon6734.pdf
AON6734 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.8. Size:279K aosemi
aon6716.pdf
AON6716 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.9. Size:313K aosemi
aon6760.pdf
AON6760 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(ON) at 4.5V VGS RDS(ON) (at VGS=10V)
9.10. Size:268K aosemi
aon6788.pdf
AON6788 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS 30V SRFETTM AON6788 uses advanced trench technology ID (at VGS=10V) 80A with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
9.11. Size:133K aosemi
aon6712.pdf
AON6712 30V N-Channel MOSFET SRFET TM General Description Product Summary The AON6712 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge.This ID = 20A (VGS = 10V) device is suitable for use as a high side switch in RDS(ON)
9.12. Size:340K aosemi
aon6756.pdf
AON6756 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 36A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.13. Size:287K aosemi
aon6754.pdf
AON6754 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.14. Size:293K aosemi
aon6758.pdf
AON6758 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 32A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.15. Size:256K aosemi
aon6780.pdf
AON6780 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6780 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
9.16. Size:290K aosemi
aon6752.pdf
AON6752 30V N-Channel AlphaMOS General Description Product Summary VDS 30V Latest Trench Power AlphaMOS ( MOS LV) technology Integrated Schottky Diode (SRFET) ID (at VGS=10V) 85A Very Low RDS(on) at 4.5VGS RDS(ON) (at VGS=10V)
9.17. Size:345K aosemi
aon6796.pdf
AON6796 30V N-Channel MOSFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 70A Low Gate Charge RDS(ON) (at VGS=10V)
9.18. Size:242K aosemi
aon6764.pdf
AON6764 30V N-Channel SRFET General Description Product Summary VDS Trench Power MOS Technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
9.19. Size:128K aosemi
aon6710.pdf
AON6710 30V N-Channel MOSFET SRFET TM General Description Product Summary VDS (V) = 30V SRFETTM The AON6710 uses advanced trench ID = 20A (VGS = 10V) technology with a monolithically integrated Schottky diode to provide excellent RDS(ON) and low gate RDS(ON)
9.20. Size:255K aosemi
aon6782.pdf
AON6782 30V N-Channel MOSFET TM SRFET General Description Product Summary VDS 30V SRFETTM AON6782 uses advanced trench technology 85A ID (at VGS=10V) with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is
Otros transistores... AON6414, AON6414AL, AON6418, AON6422, AON6454, AON6514, AON6534, AON6542, 3401, AON6704A, AON6708, AON6710, AON6712, AON6716, 2SK0601, 2SK0615, 2SK066400L
