AON6702 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: AON6702
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 83 W
Voltaje máximo drenador - fuente |Vds|: 30 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 85 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 2.4 V
Tiempo de subida (tr): 11 nS
Conductancia de drenaje-sustrato (Cd): 1100 pF
Resistencia entre drenaje y fuente RDS(on): 0.002 Ohm
Paquete / Cubierta: DFN5X6
Búsqueda de reemplazo de MOSFET AON6702
AON6702 Datasheet (PDF)
aon6702.pdf
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aon6708.pdf
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aon6790.pdf
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aon6792.pdf
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AON673430V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 85A Low Gate Charge RDS(ON) (at VGS=10V)
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AON671630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS 30VSRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)
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aon6788.pdf
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aon6754.pdf
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aon6758.pdf
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aon6780.pdf
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