AON6712 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

AON6712 Datasheet (PDF)

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AON671230V N-Channel MOSFETSRFET TM General Description Product SummaryThe AON6712 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge.ThisID = 20A (VGS = 10V)device is suitable for use as a high side switch inRDS(ON)

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AON6718LN-Channel Enhancement Mode Field Effect TransistorSRFET TM General Description FeaturesSRFETTM AON6718L uses advanced trench technology VDS (V) = 30Vwith a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is ID = 80A (VGS = 10V)ideally suited for use as a low side switch in CPU core RDS(ON)

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AON671630V N-Channel MOSFETSRFET TM General Description Product SummaryVDS 30VSRFETTM AON6716 uses advanced trench technology ID (at VGS=10V) 85Awith a monolithically integrated Schottky diode to provideexcellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V)

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AON671030V N-Channel MOSFETSRFET TM General Description Product SummaryVDS (V) = 30VSRFETTM The AON6710 uses advanced trenchID = 20A (VGS = 10V)technology with a monolithically integrated Schottkydiode to provide excellent RDS(ON) and low gateRDS(ON)

Otros transistores... AON6454 , AON6514 , AON6534 , AON6542 , AON6702 , AON6704A , AON6708 , AON6710 , IRFB7545 , AON6716 , 2SK0601 , 2SK0615 , 2SK066400L , 2SK0664G0L , 2SK066500L , 2SK0665G0L , 2SK1001 .