2SK0601 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK0601
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 3.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 15 nS
Cossⓘ - Capacitancia de salida: 30 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de MOSFET 2SK0601
2SK0601 Datasheet (PDF)
2sk0601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Silicon MOSFETs (Small Signal)2SK0601 (2SK601)Silicon N-channel MOSFETUnit: mmFor switching circuits4.50.11.60.2 1.50.1 Features Low drain-souce ON resistance RDS(on) High-speed switching Allowing to be driven directly by CMOS and TTL1 23 Mini-power type package, allowing downsizing of t
2sk066400l.pdf
Silicon MOS FETs (Small Signal)2SK0664 (2SK664)Silicon N-Channel MOS FETunit: mm0.15+0.100.3+0.10.05For switching 0.03 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto-1 2matic insertion through the tape/magazine packing.(0.65) (0.65)1.30.12.00.210 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol R
2sk0664g0l.pdf
Silicon MOS FETs (Small Signal)2SK0664 (2SK664)Silicon N-Channel MOS FETunit: mm0.15+0.100.3+0.10.05For switching 0.03 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto-1 2matic insertion through the tape/magazine packing.(0.65) (0.65)1.30.12.00.210 Absolute Maximum Ratings (Ta = 25C)Parameter Symbol R
2sk066500l 2sk0665g0l.pdf
Silicon MOSFETs (Small Signal)2SK0665 (2SK665)Silicon N-channel MOSFETUnit: mmFor switching circuits0.15+0.100.3+0.10.050.03 Features High-speed switching Small drive current owing to high input inpedance1 2 High electrostatic breakdown voltage(0.65) (0.65)1.30.1 Absolute Maximum Ratings Ta = 25C2.00.2Parameter Symbol Rating Unit
2sk0615.pdf
Silicon MOS FETs (Small Signal)2SK0615 (2SK615)Silicon N-Channel MOS FETFor switchingUnit: mm Features Low ON-resistance 2.50.16.90.1(1.0)(1.5) High-speed switching(1.5) Allowing to be driven directly by CMOS and TTLR 0.9 M type package, allowing easy automatic and manual insertion asR 0.7well as stand-alone fixing to the printed circuit board. Absolute Max
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