2SK0601 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK0601
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 3.5 V
|Id|ⓘ - Corriente continua de drenaje: 0.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 15 nS
Cossⓘ - Capacitancia de salida: 30 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 4 Ohm
Encapsulados: SOT89
Búsqueda de reemplazo de 2SK0601 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK0601 datasheet
2sk0601.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). Silicon MOSFETs (Small Signal) 2SK0601 (2SK601) Silicon N-channel MOSFET Unit mm For switching circuits 4.5 0.1 1.6 0.2 1.5 0.1 Features Low drain-souce ON resistance RDS(on) High-speed switching Allowing to be driven directly by CMOS and TTL 1 23 Mini-power type package, allowing downsizing of t
2sk066400l.pdf
Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit mm 0.15+0.10 0.3+0.1 0.05 For switching 0.0 3 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto- 1 2 matic insertion through the tape/magazine packing. (0.65) (0.65) 1.3 0.1 2.0 0.2 10 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol R
2sk0664g0l.pdf
Silicon MOS FETs (Small Signal) 2SK0664 (2SK664) Silicon N-Channel MOS FET unit mm 0.15+0.10 0.3+0.1 0.05 For switching 0.0 3 Features High-speed switching S-mini type package, allowing downsizing of the sets and auto- 1 2 matic insertion through the tape/magazine packing. (0.65) (0.65) 1.3 0.1 2.0 0.2 10 Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol R
2sk066500l 2sk0665g0l.pdf
Silicon MOSFETs (Small Signal) 2SK0665 (2SK665) Silicon N-channel MOSFET Unit mm For switching circuits 0.15+0.10 0.3+0.1 0.05 0.0 3 Features High-speed switching Small drive current owing to high input inpedance 1 2 High electrostatic breakdown voltage (0.65) (0.65) 1.3 0.1 Absolute Maximum Ratings Ta = 25 C 2.0 0.2 Parameter Symbol Rating Unit
Otros transistores... AON6534 , AON6542 , AON6702 , AON6704A , AON6708 , AON6710 , AON6712 , AON6716 , AO4468 , 2SK0615 , 2SK066400L , 2SK0664G0L , 2SK066500L , 2SK0665G0L , 2SK1001 , 2SK1004 , 2SK1005 .
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