IRF843 Todos los transistores

 0.1. Size:471K  st
 irf840 irf841 irf842 irf843-fi.pdf

 9.1. Size:99K  1
 irf840 irf841 irf840fi irf841fi.pdf

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V

 9.2. Size:458K  international rectifier
 irf840lcspbf irf840lclpbf.pdf

PD- 95759 IRF840LCSPbF IRF840LCLPbF Lead-Free 8/24/04 Document Number 91068 www.vishay.com 1 IRF840LCS/LPbF Document Number 91068 www.vishay.com 2 IRF840LCS/LPbF Document Number 91068 www.vishay.com 3 IRF840LCS/LPbF Document Number 91068 www.vishay.com 4 IRF840LCS/LPbF Document Number 91068 www.vishay.com 5 IRF840LCS/LPbF Document Number 91068 www.vishay.com

 9.3. Size:170K  international rectifier
 irf840.pdf

 9.4. Size:173K  international rectifier
 irf840lcs.pdf

PD- 93766 IRF840LCS IRF840LCL HEXFET Power MOSFET Ultra Low Gate Charge D Reduced Gate Drive Requirement VDSS = 500V Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS RDS(on) = 0.85 Extremely High Frequency Operation G Repetitive Avalanche Rated ID = 8.0A Description S This new series of low charge HEXFET power MOSFETs achieve significant lower gate charge over con

 9.5. Size:986K  international rectifier
 irf840lcpbf.pdf

PD - 94883 IRF840LCPbF Lead-Free 12/11/03 Document Number 91067 www.vishay.com 1 IRF840LCPbF Document Number 91067 www.vishay.com 2 IRF840LCPbF Document Number 91067 www.vishay.com 3 IRF840LCPbF Document Number 91067 www.vishay.com 4 IRF840LCPbF Document Number 91067 www.vishay.com 5 IRF840LCPbF Document Number 91067 www.vishay.com 6 IRF840LCPbF Document Nu

 9.6. Size:194K  international rectifier
 irf840lc.pdf

 9.7. Size:185K  international rectifier
 irf840apbf.pdf

PD- 94829 SMPS MOSFET IRF840APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.85 8.0A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and S D A

 9.8. Size:899K  international rectifier
 irf840pbf.pdf

PD - 94882 IRF840PbF Lead-Free www.irf.com 1 12/10/03 IRF840PbF 2 www.irf.com IRF840PbF www.irf.com 3 IRF840PbF 4 www.irf.com IRF840PbF www.irf.com 5 IRF840PbF 6 www.irf.com IRF840PbF TO-220AB Package Outline Dimensions are shown in millimeters (inches) 10.54 (.415) - B - 3.78 (.149) 10.29 (.405) 2.87 (.113) 4.69 (.185) 3.54 (.139) 2.62 (.103) 4.20 (.165) - A -

 9.9. Size:172K  international rectifier
 irf840s.pdf

 9.10. Size:673K  international rectifier
 irf840aspbf irf840alpbf.pdf

PD- 95143 IRF840ASPbF SMPS MOSFET IRF840ALPbF HEXFET Power MOSFET Applications VDSS RDS(on) max ID Switch Mode Power Supply (SMPS) Uninterruptible Power Supply 500V 0.85 8.0A High Speed Power Switching Lead-Free Benefits Low Gate Charge Qg Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and D

 9.11. Size:666K  international rectifier
 irf840spbf.pdf

PD-95136 IRF840SPbF Lead-Free D2Pak 05/10/04 Document Number 91071 www.vishay.com 1 IRF840SPbF Document Number 91071 www.vishay.com 2 IRF840SPbF Document Number 91071 www.vishay.com 3 IRF840SPbF Document Number 91071 www.vishay.com 4 IRF840SPbF Document Number 91071 www.vishay.com 5 IRF840SPbF Document Number 91071 www.vishay.com 6 IRF840SPbF Document Numb

 9.12. Size:199K  international rectifier
 irf840a.pdf

PD- 94829 SMPS MOSFET IRF840APbF HEXFET Power MOSFET Applications VDSS Rds(on) max ID l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply 500V 0.85 8.0A l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and S D A

 9.13. Size:60K  philips
 irf840 1.pdf

Philips Semiconductors Product specification PowerMOS transistor IRF840 Avalanche energy rated FEATURES SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching VDSS = 500 V High thermal cycling performance Low thermal resistance ID = 8.5 A g RDS(ON) 0.85 s GENERAL DESCRIPTION PINNING SOT78 (TO220AB) N-channel, enhancement mode PIN DESCRIPT

 9.14. Size:188K  st
 irf840-fi irf841-fi.pdf

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V

 9.15. Size:360K  st
 irf840.pdf

IRF840 N-CHANNEL 500V - 0.75 - 8ATO-220 PowerMesh II MOSFET TYPE VDSS RDS(on) ID IRF840 500 V

 9.16. Size:188K  st
 irf840f.pdf

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V

 9.17. Size:99K  st
 irf840a.pdf

IRF840/FI IRF841/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE VDSS RDS(on) ID IRF840 500 V

 9.18. Size:911K  fairchild semi
 irf840b irfs840b.pdf

 9.19. Size:192K  samsung
 irfp440-443 irf840-843.pdf

 9.20. Size:941K  samsung
 irf840a.pdf

Advanced Power MOSFET FEATURES BVDSS = 500 V Avalanche Rugged Technology RDS(on) = 0.85 Rugged Gate Oxide Technology Lower Input Capacitance ID = 8 A Improved Gate Charge Extended Safe Operating Area Lower Leakage Current 10 A (Max.) @ VDS = 500V Lower RDS(ON) 0.638 (Typ.) 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol Characteristic Val

 9.21. Size:206K  vishay
 irf840a sihf840a.pdf

IRF840A, SiHF840A Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 500 Requirement Available RDS(on) ( )VGS = 10 V 0.85 Improved Gate, Avalanche and Dynamic dV/dt RoHS* Qg (Max.) (nC) 38 COMPLIANT Ruggedness Qgs (nC) 9.0 Fully Characterized Capacitance and Avalanche Voltage Qgd (nC) 18 and Current Configura

 9.22. Size:284K  vishay
 irf840b.pdf

IRF840B www.vishay.com Vishay Siliconix D Series Power MOSFET FEATURES PRODUCT SUMMARY Optimal Design VDS (V) at TJ max. 550 - Low Area Specific On-Resistance RDS(on) max. at 25 C ( ) VGS = 10 V 0.85 - Low Input Capacitance (Ciss) Qg (max.) (nC) 30 - Reduced Capacitive Switching Losses Qgs (nC) 4 - High Body Diode Ruggedness Qgd (nC) 7 - Avalanche Energy Rated (UIS) Con

 9.23. Size:198K  vishay
 irf840lc irf840lcpbf sihf840lc.pdf

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 Extremely High Frequency Operation Qgs (nC) 10 Repetitive Avalanche Rated Qgd (nC) 19 Com

 9.24. Size:1039K  vishay
 irf840s sihf840s.pdf

IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Surface Mount VDS (V) 500 Available in Tape and Reel Available RDS(on) ( )VGS = 10 V 0.85 Dynamic dV/dt Rating RoHS* Qg (Max.) (nC) 63 COMPLIANT Repetitive Avalanche Rated Qgs (nC) 9.3 Fast Switching Qgd (nC) 32 Ease of Paralleling Configuration Single Simple Drive Requireme

 9.25. Size:206K  vishay
 irf840as sihf840as irf840al sihf840al.pdf

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.0 Ruggedness Qgd (nC) 18 Fully Characterized Capa

 9.26. Size:196K  vishay
 irf840lclpbf irf840lcspbf sihf840lcl sihf840lcs.pdf

IRF840LCS, IRF840LCL, SiHF840LCS, SiHF840LCL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) 500 Ultra Low Gate Charge RDS(on) ( )VGS = 10 V 0.85 Reduced Gate Drive Requirement Qg (Max.) (nC) 39 Enhanced 30 V VGS Rating Reduced Ciss, Coss, Crss Qgs (nC) 10 Extremely High Frequency Operatio

 9.27. Size:199K  vishay
 irf840alpbf irf840aspbf sihf840al sihf840as.pdf

IRF840AS, SiHF840AS, IRF840AL, SiHF840AL Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition RDS(on) ( )VGS = 10 V 0.85 Low Gate Charge Qg Results in Simple Drive Requirement Qg (Max.) (nC) 38 Improved Gate, Avalanche and Dynamic dV/dt Qgs (nC) 9.0 Ruggedness Qgd (nC) 18 Fully Characterized Capa

 9.28. Size:194K  vishay
 irf840spbf sihf840s.pdf

IRF840S, SiHF840S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Surface Mount RDS(on) ( )VGS = 10 V 0.85 Available in Tape and Reel Qg (Max.) (nC) 63 Dynamic dV/dt Rating Qgs (nC) 9.3 Repetitive Avalanche Rated Qgd (nC) 32 Fast Switching Ease of Paralleling Configuration Sin

 9.29. Size:195K  vishay
 irf840 sihf840.pdf

IRF840, SiHF840 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) 500 Available Repetitive Avalanche Rated RDS(on) ( )VGS = 10 V 0.85 RoHS* Fast Switching Qg (Max.) (nC) 63 COMPLIANT Ease of Paralleling Qgs (nC) 9.3 Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to RoHS Directive 2002/95/EC D DE

 9.30. Size:162K  vishay
 irf840lpbf sihf840l.pdf

IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.85 Repetitive Avalanche Rated Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 9.3 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to

 9.31. Size:197K  vishay
 irf840lc sihf840lc.pdf

IRF840LC, SiHF840LC Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Ultra Low Gate Charge VDS (V) 500 Reduced Gate Drive Requirement Available RDS(on) ( )VGS = 10 V 0.85 Enhanced 30 V VGS Rating RoHS* COMPLIANT Reduced Ciss, Coss, Crss Qg (Max.) (nC) 39 Extremely High Frequency Operation Qgs (nC) 10 Repetitive Avalanche Rated Qgd (nC) 19 Com

 9.32. Size:161K  vishay
 irf840l sihf840l.pdf

IRF840L, SiHF840L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) 500 Definition Dynamic dV/dt Rating RDS(on) ( )VGS = 10 V 0.85 Repetitive Avalanche Rated Qg (Max.) (nC) 63 Fast Switching Qgs (nC) 9.3 Ease of Paralleling Qgd (nC) 32 Simple Drive Requirements Configuration Single Compliant to

 9.33. Size:47K  hsmc
 hirf840.pdf

Spec. No. MOS200505 HI-SINCERITY Issued Date 2005.06.01 Revised Date 2005.06.08 MICROELECTRONICS CORP. Page No. 1/4 HIRF840 Series Pin Assignment HIRF840 / HIRF840F Tab N-CHANNEL POWER MOSFET 3-Lead Plastic TO-220AB Package Code E Pin 1 Gate Pin 2 & Tab Drain Description Pin 3 Source This N - Channel MOSFETs provide the designer with the best combination of fast swi

 9.34. Size:95K  ape
 irf840.pdf

IRF840 RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G S Description G TO-220(P) D APEC MOSFET provide the power designer with the best combination of fast S switching , lower on-resistance and reasonable cost.

 9.35. Size:94K  ape
 irf840s.pdf

IRF840S RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G S Description APEC MOSFET provide the power designer with the best combination of fast G switching , lower on-resistance and reasonable cost. D S TO-263(S)

 9.36. Size:152K  ape
 irf840i.pdf

IRF840I RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Ease of Paralleling D BVDSS 500V Fast Switching Characteristic RDS(ON) 0.85 Simple Drive Requirement ID 8A G S Description APEC MOSFET provide the power designer with the best combination G of fast switching , lower on-resistance and reasonable D TO-220CFM(I) S T

 9.37. Size:771K  blue-rocket-elect
 irf840.pdf

IRF840 Rev.H Jul.-2018 DATA SHEET / Descriptions TO-220 N MOS N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , , Low gate charge, low crss, fast switching. / Applications DC/DC These devices are well suited for high efficiency swi

 9.38. Size:1503K  kexin
 irf840s.pdf

SMD Type MOSFET N-Channel MOSFET IRF840S (KRF840S) Features VDS (V) =500V ID =8 A (VGS = 10V) RDS(ON) 0.85 (VGS = 10V) Fast switching Low thermal resistance d g s Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 500 V Gate-Source Voltage VGS 20 Ta = 25 8 Continuous Drain Current ID Ta = 1

 9.39. Size:175K  cn minos
 irf840.pdf

IRF840 SiliconN-Channel Power MOSFET Description The IRF840 uses advanced technology and design to provide excellent R . It can be used in a wide variety of applications. DS(ON) General Features V =500V,I =8A DS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application Adapter and charger Electrical

 9.40. Size:141K  inchange semiconductor
 irf840.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel Mosfet Transistor IRF840 FEATURES Drain Current ID=8.0A@ TC=25 Drain Source Voltage- VDSS= 500V(Min) Static Drain-Source On-Resistance RDS(on) = 0.85 (Max) DESCRITION Designed for high voltage, high speed switching power applic- ations such as switching regulators, converters, solenoid an

 9.41. Size:206K  inchange semiconductor
 irf840lc.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF840LC FEATURES With low gate drive requirements Ultra low gate charge Extremely high frequency operation 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications For DC-DC converter ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY

 9.42. Size:193K  inchange semiconductor
 irf840a.pdf

isc N-Channel Mosfet Transistor IRF840A FEATURES Drain Source Voltage- V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.85 (Max) DS(on) Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switch mode power supply Uninterruptable power supply High speed power switching ABSOLUTE MAXIMUM