2SK3634-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3634-Z
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 20 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 75 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm
   Paquete / Cubierta: TO252

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2SK3634-Z Datasheet (PDF)

..1. Size:245K renesas
2sk3634-z.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

7.1. Size:45K kexin
2sk3634.pdf

SMD Type ICSMD Type MOSFETMOS Field Effect Transistor2SK3634TO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1Features5.30+0.2 0.50+0.8-0.2 -0.7High voltage: VDSS = 200 VGate voltage rating: 30 V0.127RDS(on) =0.60 MAX. (VGS =10 V, ID =3.0 A)0.80+0.1 max-0.1Low Ciss: Ciss = 270 pF TYP. (VDS =10 V, VGS =0V)Built-in gate protection diode+0.12.3 0.60-0.1 1Gate4.60+

7.2. Size:2116K cn vbsemi
2sk3634.pdf

2SK3634www.VBsemi.twN-Channel 200 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature2000.245 at VGS = 10 V10 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS

7.3. Size:286K inchange semiconductor
2sk3634d.pdf

isc N-Channel MOSFET Transistor 2SK3634DFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

7.4. Size:354K inchange semiconductor
2sk3634i.pdf

isc N-Channel MOSFET Transistor 2SK3634IFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.6(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

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