2SK1650 Todos los transistores

 ..1. Size:61K  inchange semiconductor
 2sk1650.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1650 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- VDSS=900 (Min) APPLICATIONS high speed high current switching applications DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL VALUE ARAMETER T VDSS Drain-Source V

 8.1. Size:366K  toshiba
 2sk1653.pdf

www.DataSheet4U.com Downloaded from Elcodis.com electronic components distributor www.DataSheet4U.com Downloaded from Elcodis.com electronic components distributor www.DataSheet4U.com Downloaded from Elcodis.com electronic components distributor www.DataSheet4U.com Downloaded from Elcodis.com electronic components distributor www.DataSheet4U.com Downloaded from Elcodis.com elec

 8.2. Size:237K  renesas
 2sk1658.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:104K  no
 2sk1651.pdf

 8.4. Size:1697K  jiangsu
 2sk1658.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFET ID V(BR)DSS RDS(on)MAX SOT-323 10 @4V 30V 100mA 15 @2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily

 8.5. Size:84K  tysemi
 2sk1657.pdf

SMD Type SMD Type MOSFET Product specification 2SK1657 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 Features 0.4-0.1 3 Directly driven by Ics having a 3V power supply. Has low gate leakage current IGSS= 5nA MAX.@VGS= 3.0V 12 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 1GATE 2.Emitter 2 SOURCE 3.collector 3 DRAIN Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

 8.6. Size:1224K  kexin
 2sk1657-3.pdf

SMD Type MOSFET N-Channel MOSFET 2SK1657 SOT-23-3 Unit mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 Features VDS (V) = 30V ID = 0.1A 1 2 +0.02 +0.1 0.15 -0.02 0.95 -0.1 RDS(ON) 45 (VGS = 2.5V) 1.9+0.1 -0.2 RDS(ON) 25 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage V

 8.7. Size:1204K  kexin
 2sk1657.pdf

SMD Type MOSFET N-Channel MOSFET 2SK1657 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features VDS (V) = 30V ID = 0.1A 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 RDS(ON) 45 (VGS = 2.5V) +0.1 1.9-0.1 RDS(ON) 25 (VGS = 4V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 3

 8.8. Size:63K  inchange semiconductor
 2sk1652.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1652 DESCRIPTION Drain Current ID=13A@ TC=25 Drain Source Voltage- VDSS=500 (Min) APPLICATIONS high voltage,high speed applications, such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL VALUE ARAMETER T VD