2SK1652 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1652 DESCRIPTION Drain Current ID=13A@ TC=25 Drain Source Voltage- : VDSS=500 (Min) APPLICATIONS high voltage,high speed applications, such as switching regulators, converters, solenoid and relay drivers. ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VD

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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2SK1658 N-channel MOSFETID V(BR)DSS RDS(on)MAX SOT-323 10@4V30V100mA15@2.5V1. GATE2. SOURCE3. DRAINFEATURE APPLICATION Interfacing , Switching Low on-resistance Fast switching speed Low voltage drive makes this device ideal for Portable equipment Easily

SMD TypeSMD Type MOSFETProduct specification2SK1657SOT-23Unit: mm+0.12.9-0.1+0.1Features 0.4-0.13Directly driven by Ics having a 3V power supply.Has low gate leakage currentIGSS= 5nA MAX.@VGS= 3.0V12+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base1GATE2.Emitter2 SOURCE3.collector3 DRAINAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit

SMD Type MOSFETN-Channel MOSFET2SK1657SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 30V ID = 0.1A 1 2+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 45 (VGS = 2.5V)1.9+0.1-0.2 RDS(ON) 25 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage V

SMD Type MOSFETN-Channel MOSFET2SK1657SOT-23Unit: mm+0.12.9 -0.10.4+0.1-0.13 Features VDS (V) = 30V ID = 0.1A1 2+0.1+0.050.95 -0.1 0.1-0.01 RDS(ON) 45 (VGS = 2.5V)+0.11.9-0.1 RDS(ON) 25 (VGS = 4V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 3

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK1650 DESCRIPTION Drain Current ID=4A@ TC=25 Drain Source Voltage- : VDSS=900 (Min) APPLICATIONS high speed high current switching applications DC-DC converter and motor driver applications ABSOLUTE MAXIMUM RATINGS(Ta=25) UNISYMBOL VALUE ARAMETER T VDSS Drain-Source V