2SK3192 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK3192
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 30 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 115 nS
   Cossⓘ - Capacitancia de salida: 1600 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: TOP3F

Búsqueda de reemplazo de MOSFET 2SK3192

2SK3192 Datasheet (PDF)

..1. Size:87K panasonic
2sk3192.pdf

Power MOSFETs2SK3192Silicon N-channel power MOSFETUnit: mm15.00.3 5.00.2 Features11.00.2 (3.2) Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron 3.20.1 No secondary breakdown Applications2.00.12.00.2 PDP Switching mode regulator1.10.1 0.60.2 Absolute Maximum Ratings TC = 25C5.45

..2. Size:274K inchange semiconductor
2sk3192.pdf

isc N-Channel MOSFET Transistor 2SK3192FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 68m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

8.1. Size:207K 1
2sk3193.pdf

Power MOSFETs2SK3193Silicon N-channel power MOSFETUnit: mmFor switching15.00.3 5.00.211.00.2 (3.2) Features 3.20.1 Avalanche energy capability guaranteed High-speed switching Low ON resistance Ron No secondary breakdown 2.00.12.00.21.10.1 0.60.2 Absolute Maximum Ratings TC = 25CParameter Symbol Rating Unit5.450.3Drain-s

8.2. Size:51K hitachi
2sk319 2sk320.pdf

8.3. Size:43K sanken-ele
2sk3199.pdf

2SK3199External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 500 V I = 100A, V = 0V(BR) DSS D GS V 500 VDSSI 100 nA V = 30VGSS GS V 30 VGSSI 100 A V = 500V, V = 0VDSS DS GS I 5ADV 2.0 3.0 4.0 V V = 10V, I = 1mATH DS D I 2

8.4. Size:251K inchange semiconductor
2sk3199.pdf

isc N-Channel MOSFET Transistor 2SK3199FEATURESDrain Current I = 5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max) 100% avalanche testedDS(on)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose a

8.5. Size:273K inchange semiconductor
2sk3193.pdf

isc N-Channel MOSFET Transistor 2SK3193FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 350V(Min)DSSStatic Drain-Source On-Resistance: R = 150m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMN3050S-7 | CJL3443

Liste

Recientemente añadidas las descripciónes de los transistores: