2SK3225-Z MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

isc N-Channel MOSFET Transistor 2SK3225-ZFEATURESDrain Current : I =34A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

SMD Type MOSFETN-Channel MOSFET2SK3225TO-252Unit: mm6.50+0.15-0.15+0.12.30 -0.15.30+0.2-0.2 +0.80.50 -0.7 Features VDS (V) = 60V 4 ID = 34 A (VGS = 10V) RDS(ON) 18m (VGS = 10V)0.1270.80+0.1 max-0.1 RDS(ON) 27m (VGS = 4V) Low input capacitanceCiss = 2100 pF TYP 1 Gate2 Drain2.3 0.60+ 0.1- 0.13 Source+0.154.6

isc N-Channel MOSFET Transistor 2SK3225FEATURESDrain Current : I =34A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 18m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid driv

2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous: ADE-208-766) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AE-A(Package name: TO-220CFM)D1. Gate2. DrainG3. SourceS1

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AC-A(Package name: TO-220AB)D1. Gate2. Drain (Flange)G3. Source123SRev.4.00 May 15

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK322Silicon N-Channel Junction FETApplicationHF wide band amplifierOutlineMPAK311. Drain2. Source23. Gate2SK322Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitGate to drain voltage VGDO 15 VGate to source voltage VGSO 15 VDrain current ID 50 mAGate current IG 5mAChannel power dissipation Pch 150 mWChannel temperature Tch 150 CSt

SMD Type MOSFETN-Channel MOSFET2SK3224-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1 Features +0.25.30-0.2 +0.80.50 -0.7 VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 40m (VGS = 10V)0.127+0.10.80-0.1max RDS(ON) 60m (VGS = 4V) Low Ciss : Ciss = 790 pF TYP.+ 0.12.3 0.60- 0.11 Gate+0.154 .60 -0.15Drain2 Drain3 So

isc N-Channel MOSFET Transistor 2SK3229FEATURESDrain Current : I = 60A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3221-AZFEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3224FEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dri

isc N-Channel MOSFET Transistor 2SK3224-ZFEATURESDrain Current : I = 20A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 40m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3221FEATURESDrain Current : I = 2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R = 4.4(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid