2SK3225-Z Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3225-Z
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 34 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 300 nS
Cossⓘ - Capacitancia de salida: 550 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.018 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de 2SK3225-Z MOSFET
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2SK3225-Z datasheet
..1. Size:266K renesas
2sk3225-z.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
..2. Size:287K inchange semiconductor
2sk3225-z.pdf
isc N-Channel MOSFET Transistor 2SK3225-Z FEATURES Drain Current I =34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr
7.1. Size:1697K kexin
2sk3225.pdf
SMD Type MOSFET N-Channel MOSFET 2SK3225 TO-252 Unit mm 6.50+0.15 -0.15 +0.1 2.30 -0.1 5.30+0.2 -0.2 +0.8 0.50 -0.7 Features VDS (V) = 60V 4 ID = 34 A (VGS = 10V) RDS(ON) 18m (VGS = 10V) 0.127 0.80+0.1 max -0.1 RDS(ON) 27m (VGS = 4V) Low input capacitance Ciss = 2100 pF TYP 1 Gate 2 Drain 2.3 0.60+ 0.1 - 0.1 3 Source +0.15 4.6
7.2. Size:355K inchange semiconductor
2sk3225.pdf
isc N-Channel MOSFET Transistor 2SK3225 FEATURES Drain Current I =34A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 18m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid driv
8.1. Size:53K renesas
2sk3229.pdf
2SK3229 Silicon N Channel MOS FET High Speed Power Switching REJ03G1095-0200 (Previous ADE-208-766) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate 2. Drain G 3. Source S 1
8.2. Size:101K renesas
rej03g1094 2sk3228ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:87K renesas
2sk3228.pdf
2SK3228 Silicon N Channel MOS FET High Speed Power Switching REJ03G1094-0400 Rev.4.00 May 15, 2006 Features Low on-resistance RDS (on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source 1 2 3 S Rev.4.00 May 15
8.4. Size:256K renesas
2sk3224-z.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:230K renesas
2sk3221.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:29K hitachi
2sk322.pdf
2SK322 Silicon N-Channel Junction FET Application HF wide band amplifier Outline MPAK 3 1 1. Drain 2. Source 2 3. Gate 2SK322 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Gate to drain voltage VGDO 15 V Gate to source voltage VGSO 15 V Drain current ID 50 mA Gate current IG 5mA Channel power dissipation Pch 150 mW Channel temperature Tch 150 C St
8.7. Size:948K kexin
2sk3224-z.pdf
SMD Type MOSFET N-Channel MOSFET 2SK3224-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 Features +0.2 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 60V ID = 20 A (VGS = 10V) RDS(ON) 40m (VGS = 10V) 0.127 +0.1 0.80-0.1 max RDS(ON) 60m (VGS = 4V) Low Ciss Ciss = 790 pF TYP. + 0.1 2.3 0.60- 0.1 1 Gate +0.15 4 .60 -0.15 Drain 2 Drain 3 So
8.8. Size:279K inchange semiconductor
2sk3229.pdf
isc N-Channel MOSFET Transistor 2SK3229 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V = 80V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max) @VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.9. Size:357K inchange semiconductor
2sk3221-az.pdf
isc N-Channel MOSFET Transistor 2SK3221-AZ FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 4.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.10. Size:354K inchange semiconductor
2sk3224.pdf
isc N-Channel MOSFET Transistor 2SK3224 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dri
8.11. Size:287K inchange semiconductor
2sk3224-z.pdf
isc N-Channel MOSFET Transistor 2SK3224-Z FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 40m (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.12. Size:289K inchange semiconductor
2sk3221.pdf
isc N-Channel MOSFET Transistor 2SK3221 FEATURES Drain Current I = 2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R = 4.4 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Otros transistores... 2SK319, 2SK3192, 2SK320, 2SK3203L, 2SK3203S, 2SK3219-01MR, 2SK3221, 2SK3224, TK10A60D, 2SK1008, 2SK1008-01, 2SK1009-01, 2SK1010-01, 2SK1572, 2SK1574, 2SK1590C, 2SK1600
