2SK1626 Datasheet. Equivalente

 ..1. Size:194K  renesas
 2sk1626 2sk1627.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:515K  1
 2sk104 2sk105 2sk162 2sk163 2sk193 2sk195 2sk505 2sk507 2sk514 2sk518 2sk519 2sk523 2sk533 2sk660 2sk997 2sk998 2sk1000 2sk1109.pdf

 8.2. Size:102K  renesas
 rej03g0958 2sk1623lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. Size:268K  renesas
 2sk1629-e1-e.pdf

Preliminary Datasheet 2SK1629-E1-E R07DS1197EJ0200 500V - 30A - MOS FET Rev.2.00 High Speed Power Switching Mar 26, 2014 Features Low on-resistance RDS(on) = 0.22 typ. (at ID = 15 A, VGS= 10 V, Ta = 25 C) High speed switching Low drive current Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0003ZC-A (Package n

 8.4. Size:82K  renesas
 2sk1628.pdf

2SK1628, 2SK1629 Silicon N Channel MOS FET REJ03G0960-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZF-A (Package name TO-3PL) D G 1. Gate 2. D

 8.5. Size:118K  renesas
 rej03g0960 2sk1628ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:89K  renesas
 2sk1623.pdf

2SK1623(L), 2SK1623(S) Silicon N Channel MOS FET REJ03G0958-0300 (Previous ADE-208-1299) Rev.3.00 Jan 10, 2006 Application High speed power switching Features Low on-resistance High speed switching 4 V gate drive device Can be driven from 5 V source Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline RENESAS Packa

 8.7. Size:90K  renesas
 2sk1620.pdf

2SK1620(L), 2SK1620(S) Silicon N Channel MOS FET REJ03G0957-0200 (Previous ADE-208-1298) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline RENESAS Package code PRSS0004AE

 8.8. Size:57K  nec
 2sk162.pdf

 8.9. Size:1581K  cn vbsemi
 2sk1623.pdf

2SK1623 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

 8.10. Size:218K  inchange semiconductor
 2sk1623l.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK1623L FEATURES With TO-262 packaging High speed switching Low driving power Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

 8.11. Size:214K  inchange semiconductor
 2sk1629.pdf

isc N-Channel MOSFET Transistor 2SK1629 ESCRIPTION Drain Current I =30A@ T =25 D C Drain Source Voltage- V =500 (Min) DSS Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High current , high speed switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a UNI SYMBOL ARAMETER VALUE T V Drain-Source Voltage (V =0) 500 V DSS GS V