2SK2182 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK2182
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 V
   tonⓘ - Tiempo de encendido: 45 nS
   Cossⓘ - Capacitancia de salida: 90 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.3 Ohm
   Paquete / Cubierta: TO220F

Búsqueda de reemplazo de MOSFET 2SK2182

2SK2182 Datasheet (PDF)

..1. Size:260K shindengen
2sk2182.pdf

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2182Case : E-packCase : FTO-220(Unit : mm)(F3F50VX2)500V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High

..2. Size:211K inchange semiconductor
2sk2182.pdf

isc N-Channel MOSFET Transistor 2SK2182DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

8.1. Size:181K shindengen
2sk2180.pdf

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2180Case : E-packCase : TO-220(Unit : mm)(F3V50VX2)500V3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High v

8.2. Size:234K shindengen
2sk2186.pdf

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2186Case : E-packCase : TO-220(Unit : mm)(F10V50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hig

8.3. Size:240K shindengen
2sk2188 f10f50vx2.pdf

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2188Case : E-packCase : FTO-220(Unit : mm)(F10F50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hi

8.4. Size:262K shindengen
2sk2189.pdf

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2189Case : E-packCase : MTO-3P(Unit : mm)(F10W50VX2)500V 10AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vol

8.5. Size:253K shindengen
2sk2185.pdf

SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2185Case : E-packCase : FTO-220(Unit : mm)(F5F50VX2)500V5AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High

8.6. Size:211K inchange semiconductor
2sk2188.pdf

isc N-Channel MOSFET Transistor 2SK2188DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

8.7. Size:229K inchange semiconductor
2sk2180.pdf

isc N-Channel MOSFET Transistor 2SK2180DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power amplifierHigh voltage power supplyInverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE U

8.8. Size:59K inchange semiconductor
2sk2183.pdf

INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2183 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltag

8.9. Size:214K inchange semiconductor
2sk2186.pdf

isc N-Channel MOSFET Transistor 2SK2186DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

8.10. Size:211K inchange semiconductor
2sk2185.pdf

isc N-Channel MOSFET Transistor 2SK2185DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)

8.11. Size:214K inchange semiconductor
2sk2180-01.pdf

isc N-Channel MOSFET Transistor 2SK2180-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =

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