2SK2188 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2188
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3.5 VQgⓘ - Carga de la puerta: 30 nC
tonⓘ - Tiempo de encendido: 70 nS
Cossⓘ - Capacitancia de salida: 200 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Paquete / Cubierta: TO220F
Búsqueda de reemplazo de MOSFET 2SK2188
2SK2188 Datasheet (PDF)
2sk2188 f10f50vx2.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2188Case : E-packCase : FTO-220(Unit : mm)(F10F50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hi
2sk2188.pdf
isc N-Channel MOSFET Transistor 2SK2188DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
2sk2182.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2182Case : E-packCase : FTO-220(Unit : mm)(F3F50VX2)500V 3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High
2sk2180.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2180Case : E-packCase : TO-220(Unit : mm)(F3V50VX2)500V3AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High v
2sk2186.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2186Case : E-packCase : TO-220(Unit : mm)(F10V50VX2)500V 10AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input Hig
2sk2189.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2189Case : E-packCase : MTO-3P(Unit : mm)(F10W50VX2)500V 10AFEATURESInput capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small.The static Rds(on) is small.The switching time is fast.APPLICATIONSwitching power supply of AC 100V inputHigh vol
2sk2185.pdf
SHINDENGENVX-2 Series Power MOSFET N-Channel Enhancement typeOUTLINE DIMENSIONS2SK2185Case : E-packCase : FTO-220(Unit : mm)(F5F50VX2)500V5AFEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.APPLICATION Switching power supply of AC 100V input High
2sk2182.pdf
isc N-Channel MOSFET Transistor 2SK2182DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
2sk2180.pdf
isc N-Channel MOSFET Transistor 2SK2180DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power amplifierHigh voltage power supplyInverterABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE U
2sk2183.pdf
INCHANGE Semiconductor isc Product Specification isc N-Channel MOSFET Transistor 2SK2183 DESCRIPTION Drain Current ID= 5A@ TC=25 Drain Source Voltage- : VDSS= 500V(Min) Fast Switching Speed APPLICATIONS General purpose power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL VALUE UNIT ARAMETER VDSS Drain-Source Voltage (VGS=0) 500 V VGS Gate-Source Voltag
2sk2186.pdf
isc N-Channel MOSFET Transistor 2SK2186DESCRIPTIONDrain Current I = 10A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
2sk2185.pdf
isc N-Channel MOSFET Transistor 2SK2185DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0)
2sk2180-01.pdf
isc N-Channel MOSFET Transistor 2SK2180-01DESCRIPTIONDrain Current I = 3A@ T =25D CDrain Source Voltage-: V = 500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSGeneral purpose power amplifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F