IRF9511 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9511
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 20 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 30 nS
Cossⓘ - Capacitancia de salida: 85 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de IRF9511 MOSFET
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IRF9511 datasheet
8.2. Size:1126K international rectifier
irf9510pbf.pdf 
PD- 95410 IRF9510PbF Lead-Free 06/15/04 Document Number 91072 www.vishay.com 1 IRF9510PbF Document Number 91072 www.vishay.com 2 IRF9510PbF Document Number 91072 www.vishay.com 3 IRF9510PbF Document Number 91072 www.vishay.com 4 IRF9510PbF Document Number 91072 www.vishay.com 5 IRF9510PbF Document Number 91072 www.vishay.com 6 IRF9510PbF Document Number 91
8.4. Size:1061K international rectifier
irf9510spbf.pdf
PD- 95763 IRF9510SPbF Lead-Free 06/06/05 Document Number 91073 www.vishay.com 1 IRF9510SPbF Document Number 91073 www.vishay.com 2 IRF9510SPbF Document Number 91073 www.vishay.com 3 IRF9510SPbF Document Number 91073 www.vishay.com 4 IRF9510SPbF Document Number 91073 www.vishay.com 5 IRF9510SPbF Document Number 91073 www.vishay.com 6 IRF9510SPbF Peak Diode R
8.5. Size:197K vishay
irf9510 sihf9510.pdf
IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 8.7 175 C Operating Temperature Qgs (nC) 2.2 Fast Switching Qgd (nC) 4.1 Ease of Paralleling Configuration Single Simple Drive Requi
8.6. Size:197K vishay
irf9510spbf sihf9510s.pdf
IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt Rating Qgs (nC) 2.2 Repetitive Avalanche Rated P-Channel Qgd (nC) 4.1 175 C Operating Temperature Confi
8.7. Size:172K vishay
irf9510s sihf9510s.pdf
IRF9510S, SiHF9510S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 Definition VDS (V) - 100 Surface Mount RDS(on) ( )VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt Rating Qgs (nC) 2.2 Repetitive Avalanche Rated P-Channel Qgd (nC) 4.1 175 C Operating Temperature Confi
8.8. Size:271K vishay
irf9510.pdf
IRF9510 www.vishay.com Vishay Siliconix Power MOSFET FEATURES S Dynamic dV/dt rating TO-220AB Repetitive avalanche rated Available P-channel Available G 175 C operating temperature Fast switching Ease of paralleling S Simple drive requirements D G D Material categorization for definitions of compliance please see www.vishay.com/doc?99912 P
8.9. Size:147K infineon
irf9510 sihf9510.pdf
IRF9510, SiHF9510 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY Dynamic dV/dt Rating VDS (V) - 100 Available Repetitive Avalanche Rated RDS(on) ( )VGS = - 10 V 1.2 RoHS* P-Channel COMPLIANT Qg (Max.) (nC) 8.7 175 C Operating Temperature Qgs (nC) 2.2 Fast Switching Qgd (nC) 4.1 Ease of Paralleling Configuration Single Simple Drive Requi
Otros transistores... IRF843
, IRF9130
, IRF9140
, IRF9230
, IRF9240
, IRF9410
, IRF9510
, IRF9510S
, AON7403
, IRF9512
, IRF9513
, IRF9520
, IRF9520N
, IRF9520NL
, IRF9520NS
, IRF9521
, IRF9522
.
