IRF9511 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9511
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 85 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO220AB
Búsqueda de reemplazo de MOSFET IRF9511
IRF9511 Datasheet (PDF)
irf9510pbf.pdf
PD- 95410IRF9510PbF Lead-Free06/15/04Document Number: 91072 www.vishay.com1IRF9510PbFDocument Number: 91072 www.vishay.com2IRF9510PbFDocument Number: 91072 www.vishay.com3IRF9510PbFDocument Number: 91072 www.vishay.com4IRF9510PbFDocument Number: 91072 www.vishay.com5IRF9510PbFDocument Number: 91072 www.vishay.com6IRF9510PbFDocument Number: 91
irf9510spbf.pdf
PD- 95763IRF9510SPbF Lead-Free06/06/05Document Number: 91073 www.vishay.com1IRF9510SPbFDocument Number: 91073 www.vishay.com2IRF9510SPbFDocument Number: 91073 www.vishay.com3IRF9510SPbFDocument Number: 91073 www.vishay.com4IRF9510SPbFDocument Number: 91073 www.vishay.com5IRF9510SPbFDocument Number: 91073 www.vishay.com6IRF9510SPbFPeak Diode R
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
irf9510spbf sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
irf9510s sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
irf9510.pdf
IRF9510www.vishay.comVishay SiliconixPower MOSFETFEATURESS Dynamic dV/dt ratingTO-220AB Repetitive avalanche rated Available P-channelAvailableG 175 C operating temperature Fast switching Ease of parallelingS Simple drive requirementsDG D Material categorization: for definitions of complianceplease see www.vishay.com/doc?99912P
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
Otros transistores... IRF843 , IRF9130 , IRF9140 , IRF9230 , IRF9240 , IRF9410 , IRF9510 , IRF9510S , EMB04N03H , IRF9512 , IRF9513 , IRF9520 , IRF9520N , IRF9520NL , IRF9520NS , IRF9521 , IRF9522 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918