2SK1778 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1778
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 28 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.25 Ohm
Encapsulados: TO220FM
Búsqueda de reemplazo de 2SK1778 MOSFET
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2SK1778 datasheet
2sk1771.pdf
2SK1771 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type 2SK1771 FM Tuner, VHF RF Amplifier Applications Unit mm Superior inter modulation performance. Low noise figure NF = 1.0dB (typ.) Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Drain-source voltage VDS 12.5 V Gate-source voltage VGS 8 V Drain current ID 30 mA Drain power
2sk1775.pdf
2SK1775 Silicon N Channel MOS FET REJ03G0973-0200 (Previous ADE-208-1320) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter Outline RENESAS Package code PRSS0003ZA-A (Package name TO-3PFM) D
rej03g0973 2sk1775ds.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
Otros transistores... 2SK1750-Z , 2SK1751-Z , 2SK1766 , 2SK1767 , 2SK1768 , 2SK1769 , 2SK1774 , 2SK1776 , 50N06 , 2SK1792 , 2SK1793-Z , 2SK3022 , 2SK3030 , 2SK3031 , 2SK3043 , 2SK3044 , 2SK3045 .
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