IRF9513
MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF9513
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 20
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 60
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 2.5
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4
V
Qgⓘ - Carga de la puerta: 8.5
nC
trⓘ - Tiempo de subida: 30
nS
Cossⓘ - Capacitancia
de salida: 85
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6
Ohm
Paquete / Cubierta:
TO220AB
- Selección de transistores por parámetros
IRF9513
Datasheet (PDF)
8.2. Size:1126K international rectifier
irf9510pbf.pdf 
PD- 95410IRF9510PbF Lead-Free06/15/04Document Number: 91072 www.vishay.com1IRF9510PbFDocument Number: 91072 www.vishay.com2IRF9510PbFDocument Number: 91072 www.vishay.com3IRF9510PbFDocument Number: 91072 www.vishay.com4IRF9510PbFDocument Number: 91072 www.vishay.com5IRF9510PbFDocument Number: 91072 www.vishay.com6IRF9510PbFDocument Number: 91
8.4. Size:1061K international rectifier
irf9510spbf.pdf
PD- 95763IRF9510SPbF Lead-Free06/06/05Document Number: 91073 www.vishay.com1IRF9510SPbFDocument Number: 91073 www.vishay.com2IRF9510SPbFDocument Number: 91073 www.vishay.com3IRF9510SPbFDocument Number: 91073 www.vishay.com4IRF9510SPbFDocument Number: 91073 www.vishay.com5IRF9510SPbFDocument Number: 91073 www.vishay.com6IRF9510SPbFPeak Diode R
8.5. Size:197K vishay
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
8.6. Size:197K vishay
irf9510spbf sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
8.7. Size:172K vishay
irf9510s sihf9510s.pdf
IRF9510S, SiHF9510SVishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21DefinitionVDS (V) - 100 Surface MountRDS(on) ()VGS = - 10 V 1.2 Available in Tape and Reel Qg (Max.) (nC) 8.7 Dynamic dV/dt RatingQgs (nC) 2.2 Repetitive Avalanche Rated P-ChannelQgd (nC) 4.1 175 C Operating TemperatureConfi
8.8. Size:271K vishay
irf9510.pdf
IRF9510www.vishay.comVishay SiliconixPower MOSFETFEATURESS Dynamic dV/dt ratingTO-220AB Repetitive avalanche rated Available P-channelAvailableG 175 C operating temperature Fast switching Ease of parallelingS Simple drive requirementsDG D Material categorization: for definitions of complianceplease see www.vishay.com/doc?99912P
8.9. Size:147K infineon
irf9510 sihf9510.pdf
IRF9510, SiHF9510Vishay SiliconixPower MOSFETFEATURESPRODUCT SUMMARY Dynamic dV/dt RatingVDS (V) - 100Available Repetitive Avalanche RatedRDS(on) ()VGS = - 10 V 1.2RoHS* P-ChannelCOMPLIANTQg (Max.) (nC) 8.7 175 C Operating TemperatureQgs (nC) 2.2 Fast SwitchingQgd (nC) 4.1 Ease of ParallelingConfiguration Single Simple Drive Requi
Otros transistores... IRF9140
, IRF9230
, IRF9240
, IRF9410
, IRF9510
, IRF9510S
, IRF9511
, IRF9512
, IRFP064N
, IRF9520
, IRF9520N
, IRF9520NL
, IRF9520NS
, IRF9521
, IRF9522
, IRF9523
, IRF9530
.
History: IRF9522
