2SK3022 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3022
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 10 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 30 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.13 Ohm
Encapsulados: TO252
Búsqueda de reemplazo de 2SK3022 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3022 datasheet
..2. Size:286K inchange semiconductor
2sk3022.pdf 
isc N-Channel MOSFET Transistor 2SK3022 FEATURES Drain Current I = 5.0A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 135m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.1. Size:155K 1
2sk3027.pdf
Power F-MOS FETs 2SK3027 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor
8.2. Size:158K 1
2sk3028.pdf
Power F-MOS FETs 2SK3028 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 15.5 0.5 3.0 0.3 Low-voltage drive 3.2 0.1 High electrostatic breakdown voltage 5 5 Applications Contactless relay Diving circuit for a solenoid 5 5 Driving circuit
8.3. Size:179K 1
2sk3029.pdf
Power F-MOS FETs 2SK3029 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 5.3 0.1 No secondary breakdown 4.35 0.1 0.5 0.1 Low-voltage drive High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.0
8.4. Size:179K 1
2sk3023.pdf
Power F-MOS FETs 2SK3023 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05
8.5. Size:157K 1
2sk3026.pdf
Power F-MOS FETs 2SK3026 (Tentative) Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance No secondary breakdown 4.6 0.2 Low-voltage drive 9.9 0.3 2.9 0.2 High electrostatic breakdown voltage 3.2 0.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor
8.6. Size:206K toshiba
2sk302.pdf
2SK302 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK302 FM Tuner, VHF RF Amplifier Applications Unit mm Low reverse transfer capacitance Crss = 0.035 pF (typ.) Low noise figure NF = 1.7dB (typ.) High power gain G = 28dB (typ.) ps Recommend operation voltage 5 15 V Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit
8.7. Size:151K sanyo
2sk3021.pdf
Ordering number ENN6230 N-Channel Silicon MOSFET 2SK3021 DC/DC Converter Applications Features Package Dimensions Low ON-resistance. unit mm 4V drive. 2083B [2SK3021] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3021] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 Gate 0 to 0
8.8. Size:177K sanyo
2sk3020.pdf
Ordering number ENN6229 N-Channel Silicon MOSFET 2SK3020 DC/DC Converter Applications Features Package Dimensions Low ON resistance. unit mm 4V drive. 2083B [2SK3020] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 2 Drain 1 2 3 3 Source 4 Drain 2.3 2.3 SANYO TP unit mm 2092B [2SK3020] 6.5 2.3 5.0 0.5 4 0.5 0.85 1 2 3 0.6 1.2 1 Gate 0 to 0
8.9. Size:179K panasonic
2sk3025.pdf
This product complies with the RoHS Directive (EU 2002/95/EC). Power MOS FETs 2SK3025 Silicon N-channel power MOS FET Features Package Code Avalanche energy capability guaranteed High-speed switching U-DL Low ON resistance Ron Pin Name No secondary breakdown 1 Gate Low-voltage drive 2 Drain High electrostatic energy capability 3 Source
8.10. Size:54K panasonic
2sk3024.pdf
Power F-MOS FETs 2SK3024 Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switching unit mm Low ON-resistance 6.5 0.1 2.3 0.1 No secondary breakdown 5.3 0.1 4.35 0.1 Low-voltage drive 0.5 0.1 High electrostatic breakdown voltage Applications Contactless relay 1.0 0.1 Diving circuit for a solenoid 0.1 0.05 2 0.5 0.1
8.12. Size:279K inchange semiconductor
2sk3027.pdf
isc N-Channel MOSFET Transistor 2SK3027 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =12m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.13. Size:292K inchange semiconductor
2sk3028.pdf
isc N-Channel MOSFET Transistor 2SK3028 FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =7.5m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.14. Size:286K inchange semiconductor
2sk3029.pdf
isc N-Channel MOSFET Transistor 2SK3029 FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R =0.42m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.15. Size:286K inchange semiconductor
2sk3023.pdf
isc N-Channel MOSFET Transistor 2SK3023 FEATURES Drain Current I = 10A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 80m (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.16. Size:286K inchange semiconductor
2sk3024.pdf
isc N-Channel MOSFET Transistor 2SK3024 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =50m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
8.17. Size:279K inchange semiconductor
2sk3026.pdf
isc N-Channel MOSFET Transistor 2SK3026 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R =18m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d
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History: AP9563GJ
