2SK1349 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK1349
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Id|ⓘ - Corriente continua
de drenaje: 25 A
CARACTERÍSTICAS ELÉCTRICAS
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
Encapsulados: TO220IS
Búsqueda de reemplazo de 2SK1349 MOSFET
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2SK1349 datasheet
8.1. Size:83K renesas
2sk1342.pdf 
2SK1342 Silicon N Channel MOS FET REJ03G0939-0200 (Previous ADE-208-1279) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D
8.2. Size:97K renesas
rej03g0939 2sk1342ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.3. Size:82K renesas
2sk1341.pdf 
2SK1341 Silicon N Channel MOS FET REJ03G0938-0200 (Previous ADE-208-1278) Rev.2.00 Sep 07, 2005 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D
8.4. Size:98K renesas
rej03g0937 2sk1340ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. Size:95K renesas
rej03g0938 2sk1341ds.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.6. Size:89K renesas
2sk1340.pdf 
2SK1340 Silicon N Channel MOS FET REJ03G0937-0300 Rev.3.00 May 15, 2006 Application High speed power switching Features Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline RENESAS Package code PRSS0004ZE-A (Package name TO-3P) D 1. Gate G 2. Drain (Fla
8.7. Size:189K hitachi
2sk133 2sk134 2sk135.pdf 
This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer
8.11. Size:203K inchange semiconductor
2sk1342.pdf 
isc N-Channel MOSFET Transistor 2SK1342 DESCRIPTION Drain Current I = 8A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra
8.12. Size:203K inchange semiconductor
2sk1341.pdf 
isc N-Channel MOSFET Transistor 2SK1341 DESCRIPTION Drain Current I = 6A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra
8.13. Size:203K inchange semiconductor
2sk1340.pdf 
isc N-Channel MOSFET Transistor 2SK1340 DESCRIPTION Drain Current I = 5A@ T =25 D C Drain Source Voltage- V = 900V(Min) DSS Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage, high speed power switching ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL ARAMETER VALUE UNIT V Dra
Otros transistores... 2SK3050
, 2SK1331
, 2SK1333
, 2SK1344
, 2SK1345
, 2SK1346
, 2SK1347
, 2SK1348
, IRF9540
, 2SK1350
, 2SK1351
, 2SK1352
, 2SK1357
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.