2SK1350 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1350
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 45 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 580 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.18 Ohm
   Paquete / Cubierta: TO220IS

Búsqueda de reemplazo de MOSFET 2SK1350

2SK1350 Datasheet (PDF)

..1. Size:54K no
2sk1350.pdf

..2. Size:214K inchange semiconductor
2sk1350.pdf

isc N-Channel MOSFET Transistor 2SK1350DESCRIPTIONDrain Current I =15A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 200

8.1. Size:408K toshiba
2sk1359.pdf

2SK1359 .5TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII ) 2SK1359 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Yfs| = 2.0 S (typ.) Low leakage current : IDSS = 300 A (max) (VDS = 800 V) Enhancement mode : Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1

8.2. Size:569K toshiba
2sk1358.pdf

TOSHIBADiscrete Semiconductors 2SK1358Industrial Applications Unit in mmField Effect TransistorSilicon N Channel MOS Type ( -MOS II.5)High Speed, High Current DC-DC Converter,Relay Drive and Motor Drive ApplicationsFeatures Low Drain-Source ON Resistance- RDS(ON) = 1.1 (Typ.) High Forward Transfer Admittance- Yfs = 4.0S (Typ.) Low Leakage Current-

8.3. Size:279K toshiba
2sk1357.pdf

8.4. Size:189K hitachi
2sk133 2sk134 2sk135.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.5. Size:39K no
2sk1356.pdf

8.6. Size:54K no
2sk1352.pdf

8.7. Size:87K no
2sk1351.pdf

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8.8. Size:227K inchange semiconductor
2sk1356.pdf

isc N-Channel MOSFET Transistor 2SK1356DESCRIPTIONDrain Current I =3A@ T =25D CDrain Source Voltage-: V =900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

8.9. Size:175K inchange semiconductor
2sk1352.pdf

isc N-Channel MOSFET Transistor 2SK1352DESCRIPTIONDrain Current I =7A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

8.10. Size:197K inchange semiconductor
2sk1351.pdf

isc N-Channel MOSFET Transistor 2SK1351DESCRIPTIONDrain Current I =5A@ T =25D CDrain Source Voltage-: V =500V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain

8.11. Size:238K inchange semiconductor
2sk1358.pdf

isc N-Channel MOSFET Transistor 2SK1358DESCRIPTIONDrain Current I = 9A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high current DC-DC converter,Relay Drive adn Moto Drives Applications.A

8.12. Size:203K inchange semiconductor
2sk1357.pdf

isc N-Channel MOSFET Transistor 2SK1357DESCRIPTIONDrain Current I = 5A@ T =25D CDrain Source Voltage-: V = 900V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONShigh voltage, high speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Vol

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