2SK2673 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK2673
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 900 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
tonⓘ - Tiempo de encendido: 55 nS
Cossⓘ - Capacitancia de salida: 105 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm
Encapsulados: TO3PF
Búsqueda de reemplazo de 2SK2673 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK2673 datasheet
2sk2673 fp5w90hvx2.pdf
SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2673 Case ITO-3P (Unit mm) ( FP5W90HVX2 ) 900V 5A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of A
2sk2679.pdf
2SK2679 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK2679 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit mm Low drain-source ON resistance RDS = 0.84 (typ.) (ON) High forward transfer admittance Y = 4.4 S (typ.) fs Low leakage current I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode Vth = 2.0 4.0 V
2sk2676 f10w90hvx2.pdf
SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2676 Case MTO-3P (Unit mm) ( F10W90HVX2 ) 900V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast. Avalanche resistance guaranteed. APPLICATION Switching power supply of
2sk2677.pdf
! SHINDENGEN HVX-2 Series Power MOSFET N-Channel Enhancement type OUTLINE DIMENSIONS 2SK2677 Case ITO-3P (Unit mm) (FP10W90HVX2) 900V 10A FEATURES Input capacitance (Ciss) is small. Especially, input capacitance at 0 biass is small. The static Rds(on) is small. The switching time is fast.
Otros transistores... 2SK1357 , 2SK2664 , 2SK2665 , 2SK2666 , 2SK2667 , 2SK2669 , 2SK2670 , 2SK2672 , SPP20N60C3 , 2SK2676 , 2SK2677 , 2SK356 , 2SK3570 , 2SK3571 , 2SK3572 , 2SK3573 , 2SK3573-S .
History: SCH1330 | 2SK1298 | SI4403DDY
History: SCH1330 | 2SK1298 | SI4403DDY
🌐 : EN ES РУ
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AUB034N10 | AUB033N08BG | AUB026N085 | AUA062N08BG | AUA060N08AG | AUA056N08BGL | AUA039N10 | ASW80R290E | ASW65R120EFD | ASW65R110E | ASW65R095EFD | ASW65R046EFD | ASW65R041EFDA | ASW65R041E | ASW60R150E | ASW60R090EFDA
Popular searches
lm317t datasheet | irf540 | bc337 | ksc1845 | c1815 transistor | 2sc1815 | irfz44 | 2n5551
