2SK3573-S Todos los transistores

 ..1. Size:283K  inchange semiconductor
 2sk3573-s.pdf

isc N-Channel MOSFET Transistor 2SK3573-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 0.1. Size:74K  nec
 2sk3573-s-z-zk.pdf

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3573 TO-220AB designed for low voltage high current applications such as 2SK3573-S TO-262 DC/DC converter with synchronous

 6.1. Size:357K  inchange semiconductor
 2sk3573-z.pdf

isc N-Channel MOSFET Transistor 2SK3573-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 6.2. Size:357K  inchange semiconductor
 2sk3573-zk.pdf

isc N-Channel MOSFET Transistor 2SK3573-ZK FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno