2SK3577 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK3577
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.25 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua
de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 200 nS
Cossⓘ - Capacitancia de salida: 60 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.063 Ohm
Encapsulados: SC96
Búsqueda de reemplazo de 2SK3577 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK3577 datasheet
..1. Size:197K renesas
2sk3577.pdf 
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.1. Size:82K 1
2sk3570 2sk3570-s 2sk3570-z 2sk3570-zk.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3570 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3570 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3570 TO-220AB designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 2SK3570-S
8.2. Size:101K 1
2sk3579-01mr.pdf
2SK3579-01MR N-CHANNEL SILICON POWER MOSFET FUJI POWER MOSFET Outline Drawings Super FAP-G Series TO-220F Features Applications High speed switching Switching regulators Low on-resistance UPS (Uninterruptible Power Supply) No secondary breadown DC-DC converters Low driving power Avalanche-proof Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unless otherwis
8.3. Size:82K 1
2sk3571 2sk3571-s 2sk3571-z 2sk3571-zk.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3571 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3571 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3571 TO-220AB designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 2SK3571-S
8.4. Size:86K 1
2sk3574 2sk3574-s 2sk3574-z 2sk3574-zk.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3574 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3574 is N-channel MOS FET device that PART NUMBER PACKAGE features a low on-state resistance and excellent switching 2SK3574 TO-220AB characteristics, designed for low voltage high current 2SK3574-S TO-262 applications such as DC/DC converter with synchronous 2S
8.5. Size:80K 1
2sk3572 2sk3572-s 2sk3572-z 2sk3572-zk.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3572 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3572 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3572 TO-220AB designed for low voltage high current applications such as 2SK3572-S TO-262 DC/DC converter with synchronous
8.7. Size:193K renesas
2sk3576.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.8. Size:213K renesas
2sk3575-s-z-zk.pdf
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.9. Size:74K nec
2sk3573-s-z-zk.pdf
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3573 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3573 is N-channel MOS FET device that features a PART NUMBER PACKAGE low on-state resistance and excellent switching characteristics, 2SK3573 TO-220AB designed for low voltage high current applications such as 2SK3573-S TO-262 DC/DC converter with synchronous
8.10. Size:44K kexin
2sk3571.pdf
SMD Type MOSFET MOS Field Effect Transistor 2SK3571 TO-263 Unit mm +0.2 4.57-0.2 +0.1 1.27-0.1 Features 4.5V drive available. Low on-state resistance, RDS(on)1 =9m MAX. (VGS =10 V, ID =24A) +0.1 0.1max 1.27-0.1 Low gate charge +0.1 0.81-0.1 QG = 21 nC TYP. (VDD =16V, VGS =10V, ID =48A) 2.54 1Gate +0.2 Built-in gate protection diode 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2 2
8.11. Size:43K kexin
2sk3574.pdf
SMD Type MOSFET MOS Field Effect Transistor 2SK3574 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 = 13.5m MAX. (VGS =10V, ID = 24A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 22nC TYP. (VDD =24 V, VGS =10 V, ID =48A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount
8.12. Size:45K kexin
2sk3572.pdf
SMD Type MOSFET MOS Field Effect Transistor 2SK3572 TO-263 Unit mm +0.2 4.57-0.2 +0.1 Features 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =5.7m MAX. (VGS =10V, ID = 40A) +0.1 0.1max 1.27-0.1 Low gate charge +0.1 0.81-0.1 QG = 32 nC TYP. (VDD =16V, VGS =10V, ID =80A) 2.54 1Gate Built-in gate protection diode +0.2 2.54-0.2 +0.1 +0.2 5.08-0.1 0.4-0.2
8.13. Size:43K kexin
2sk3573.pdf
SMD Type MOSFET MOS Field Effect Transistor 2SK3573 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =4.0m MAX. (VGS =10V, ID = 42A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 68nC TYP. (VDD =16 V, VGS =10 V, ID =83A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount d
8.14. Size:45K kexin
2sk3570.pdf
SMD Type MOSFET MOS Field Effect Transistor 2SK3570 TO-263 Unit mm Features +0.2 4.57-0.2 +0.1 1.27-0.1 4.5V drive available. Low on-state resistance, RDS(on)1 =12 m MAX. (VGS =10V, ID =24A) +0.1 0.1max 1.27-0.1 Low gate charge QG = 23 nC TYP. (VDD =16V, VGS =10V, ID =48A) +0.1 0.81-0.1 Built-in gate protection diode 2.54 1Gate +0.2 2.54-0.2 +0.1 +0.2 Surface mount dev
8.15. Size:358K inchange semiconductor
2sk3571-zk.pdf
isc N-Channel MOSFET Transistor 2SK3571-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.16. Size:283K inchange semiconductor
2sk3571-s.pdf
isc N-Channel MOSFET Transistor 2SK3571-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.17. Size:358K inchange semiconductor
2sk3570-z.pdf
isc N-Channel MOSFET Transistor 2SK3570-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.18. Size:284K inchange semiconductor
2sk3570-s.pdf
isc N-Channel MOSFET Transistor 2SK3570-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.19. Size:283K inchange semiconductor
2sk3572-s.pdf
isc N-Channel MOSFET Transistor 2SK3572-S FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.20. Size:290K inchange semiconductor
2sk3571.pdf
isc N-Channel MOSFET Transistor 2SK3571 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.21. Size:280K inchange semiconductor
2sk3579-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3579-01MR FEATURES Drain Current I = 23A@ T =25 D C Drain Source Voltage V = 150V(Min) DSS Static Drain-Source On-Resistance R = 90m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
8.22. Size:283K inchange semiconductor
2sk3573-s.pdf
isc N-Channel MOSFET Transistor 2SK3573-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.23. Size:357K inchange semiconductor
2sk3572-z.pdf
isc N-Channel MOSFET Transistor 2SK3572-Z FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.24. Size:357K inchange semiconductor
2sk3575-zk.pdf
isc N-Channel MOSFET Transistor 2SK3575-ZK FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.25. Size:283K inchange semiconductor
2sk3575-s.pdf
isc N-Channel MOSFET Transistor 2SK3575-S FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.26. Size:357K inchange semiconductor
2sk3574-z.pdf
isc N-Channel MOSFET Transistor 2SK3574-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.27. Size:357K inchange semiconductor
2sk3574-zk.pdf
isc N-Channel MOSFET Transistor 2SK3574-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.28. Size:289K inchange semiconductor
2sk3575.pdf
isc N-Channel MOSFET Transistor 2SK3575 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.29. Size:357K inchange semiconductor
2sk3575-z.pdf
isc N-Channel MOSFET Transistor 2SK3575-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 4.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.30. Size:358K inchange semiconductor
2sk3571-z.pdf
isc N-Channel MOSFET Transistor 2SK3571-Z FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.31. Size:357K inchange semiconductor
2sk3572-zk.pdf
isc N-Channel MOSFET Transistor 2SK3572-ZK FEATURES Drain Current I = 80A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 5.7m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.32. Size:357K inchange semiconductor
2sk3573-z.pdf
isc N-Channel MOSFET Transistor 2SK3573-Z FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.33. Size:357K inchange semiconductor
2sk3573-zk.pdf
isc N-Channel MOSFET Transistor 2SK3573-ZK FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.34. Size:289K inchange semiconductor
2sk3574.pdf
isc N-Channel MOSFET Transistor 2SK3574 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
8.35. Size:358K inchange semiconductor
2sk3570-zk.pdf
isc N-Channel MOSFET Transistor 2SK3570-ZK FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.36. Size:289K inchange semiconductor
2sk3572.pdf
isc N-Channel MOSFET Transistor 2SK3572 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 9m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.37. Size:283K inchange semiconductor
2sk3574-s.pdf
isc N-Channel MOSFET Transistor 2SK3574-S FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 13.5m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.38. Size:289K inchange semiconductor
2sk3573.pdf
isc N-Channel MOSFET Transistor 2SK3573 FEATURES Drain Current I = 83A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 4m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.39. Size:290K inchange semiconductor
2sk3570.pdf
isc N-Channel MOSFET Transistor 2SK3570 FEATURES Drain Current I = 48A@ T =25 D C Drain Source Voltage V = 20V(Min) DSS Static Drain-Source On-Resistance R = 12m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Otros transistores... 2SK3573-Z
, 2SK3573-ZK
, 2SK3574
, 2SK3575
, 2SK3575-S
, 2SK3575-Z
, 2SK3575-ZK
, 2SK3576
, AO4407
, 2SK358
, 2SK4178-ZK
, 2SK4181-TL-E
, 2SK4184-ZK
, 2SK4201-S19-AY
, 2SK4202-S19-AY
, 2SK4212A-ZK
, 2SK4212-ZK
.
History: AP20P02GJ
| AP4525GEM
| AP6N090N
| AP8N010LM
| AP6N090G
| AP03N70H
