2SK358 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK358
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 20 nS
Cossⓘ - Capacitancia de salida: 185 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 1 Ohm
Encapsulados: TO220AB
Búsqueda de reemplazo de 2SK358 MOSFET
- Selecciónⓘ de transistores por parámetros
2SK358 datasheet
0.1. Size:122K toshiba
2sk3582tk.pdf 
2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 3 Characteristic Symbol Rating Unit 2 Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Storag
0.2. Size:141K toshiba
2sk3582tv.pdf
2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Unit mm Application for Ultra-compact ECM 1.2 0.05 0.8 0.05 Absolute Maximum Ratings (Ta=25 C) 1 2 3 Characteristic Symbol Rating Unit Gate-Drain voltage VGDO -20 V Gate Current IG 10 mA Drain power dissipation (Ta = 25 C) PD 100 mW Junction Temperature Tj 125 C Stora
0.3. Size:90K fuji
2sk3589-01.pdf
FUJI POWER MOSFET200303 2SK3589-01 Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications for Switching Foot Print Pattern Absolute Maximum Ratings at Tc=25 C ( unless otherwise specified) Item Symbol Ratings Unit Remarks Equivalent circuit schema
0.4. Size:105K fuji
2sk3580-01mr.pdf
2SK3580-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series TO-220F Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
0.5. Size:93K fuji
2sk3587-01mr.pdf
2SK3587-01MR 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C un
0.6. Size:92K fuji
2sk3586-01.pdf
2SK3586-01 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features TO-220AB High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unl
0.7. Size:246K fuji
2sk3588-01l-s-sj.pdf
2SK3588-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings (mm) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof See to p4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25
0.8. Size:251K fuji
2sk3581-01l-s-sj.pdf
2SK3581-01L,S,SJ 200304 FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Super FAP-G Series Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof P4 Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings (Tc=25 C unle
0.9. Size:255K inchange semiconductor
2sk3580-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3580-01MR FEATURES With TO-220F packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBO
0.10. Size:282K inchange semiconductor
2sk3581l.pdf
isc N-Channel MOSFET Transistor 2SK3581L FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.46 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
0.11. Size:279K inchange semiconductor
2sk3587-01mr.pdf
isc N-Channel MOSFET Transistor 2SK3587-01MR FEATURES Drain Current I = 73A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and so
0.12. Size:356K inchange semiconductor
2sk3588s.pdf
isc N-Channel MOSFET Transistor 2SK3588S FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
0.13. Size:356K inchange semiconductor
2sk3581s.pdf
isc N-Channel MOSFET Transistor 2SK3581S FEATURES Drain Current I = 16A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.46 (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
0.14. Size:289K inchange semiconductor
2sk3586-01.pdf
isc N-Channel MOSFET Transistor 2SK3586-01 FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
0.15. Size:282K inchange semiconductor
2sk3588l.pdf
isc N-Channel MOSFET Transistor 2SK3588L FEATURES Drain Current I = 50A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 25m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno
Otros transistores... 2SK3573-ZK
, 2SK3574
, 2SK3575
, 2SK3575-S
, 2SK3575-Z
, 2SK3575-ZK
, 2SK3576
, 2SK3577
, BS170
, 2SK4178-ZK
, 2SK4181-TL-E
, 2SK4184-ZK
, 2SK4201-S19-AY
, 2SK4202-S19-AY
, 2SK4212A-ZK
, 2SK4212-ZK
, 2SK4213A-ZK
.
History: 2SK1444LS
| CS8N60A8D
