2SK4213-ZK Todos los transistores

 

2SK4213-ZK MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK4213-ZK

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 45 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 64 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 310 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO252

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2SK4213-ZK datasheet

 ..1. Size:152K  nec
2sk4213-zk 2sk4213a-zk.pdf pdf_icon

2SK4213-ZK

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 6.0 m M

 7.1. Size:153K  nec
2sk4213.pdf pdf_icon

2SK4213-ZK

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK4213 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES Low on-state resistance RDS(on)1 = 6.0 m M

 7.2. Size:287K  inchange semiconductor
2sk4213a.pdf pdf_icon

2SK4213-ZK

isc N-Channel MOSFET Transistor 2SK4213A FEATURES Drain Current I = 64A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 6.0m (Max) @ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.1. Size:497K  sanyo
2sk4210.pdf pdf_icon

2SK4213-ZK

2SK4210 Ordering number ENA1517 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK4210 Applications Features Low ON-resistance, ultrahigh-speed switching. Adoption of high reliability HVP process. Avalanche resistance guarantee. Specifications at Ta=25 C Absolute Maximum Ratings Parameter Symbol Conditions Ratings Unit D

Otros transistores... 2SK4178-ZK , 2SK4181-TL-E , 2SK4184-ZK , 2SK4201-S19-AY , 2SK4202-S19-AY , 2SK4212A-ZK , 2SK4212-ZK , 2SK4213A-ZK , AO3407 , 2SK4178-S27-AY , 2SK4004-01MR , 2SK4005-01MR , 2SK4006-01L , 2SK4006-01S , 2SK4006-01SJ , 2SK1112 , 2SK1113 .

 

 

 


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