2SK1114 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1114

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 12 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.07 Ohm

Empaquetado / Estuche: TO220AB

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2SK1114 Datasheet (PDF)

1.1. 2sk1114.pdf Size:132K _update

4.1. 2sk1113.pdf Size:85K _update

4.2. 2sk1116.pdf Size:55K _update

4.3. 2sk1115.pdf Size:78K _update

4.4. 2sk1112.pdf Size:203K _update

4.5. 2sk1119.pdf Size:395K _toshiba

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 ? (typ.) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 300 µA (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1 mA)

4.6. 2sk1118.pdf Size:194K _toshiba

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

4.7. 2sk1117.pdf Size:55K _no

4.8. 2sk1118.pdf Size:250K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1118 DESCRIPTION ·Drain Current –I =6A@ T =25℃ D C ·Drain Source Voltage- : V = 600V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid and rela

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