2SK1114 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK1114

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 40 W

Tensión drenaje-fuente (Vds): 60 V

Corriente continua de drenaje (Id): 12 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.07 Ohm

Empaquetado / Estuche: TO220AB

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2SK1114 Datasheet (PDF)

1.1. 2sk1114.pdf Size:132K _update

4.1. 2sk1112.pdf Size:203K _update

4.2. 2sk1115.pdf Size:78K _update

4.3. 2sk1113.pdf Size:85K _update

4.4. 2sk1116.pdf Size:55K _update

4.5. 2sk1119.pdf Size:395K _toshiba

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (?-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 ? (typ.) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 300 µA (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1 mA)

4.6. 2sk1118.pdf Size:194K _toshiba

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4.7. 2sk1117.pdf Size:55K _no