2SK1116 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2SK1116
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 16 nS
   Cossⓘ - Capacitancia de salida: 920 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.058 Ohm
   Paquete / Cubierta: TO220AB

Búsqueda de reemplazo de MOSFET 2SK1116

2SK1116 Datasheet (PDF)

..1. Size:55K toshiba
2sk1116.pdf

..2. Size:261K inchange semiconductor
2sk1116.pdf

isc N-Channel MOSFET Transistor 2SK1116FEATURESDrain Current I = 25A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R = 58m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

8.1. Size:78K toshiba
2sk1115.pdf

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8.2. Size:85K toshiba
2sk1113.pdf

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8.3. Size:203K toshiba
2sk1112.pdf

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8.4. Size:395K toshiba
2sk1119.pdf

2SK1119 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSII.5) 2SK1119 DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 3.0 (typ.) High forward transfer admittance : |Y | = 2.0 S (typ.) fs Low leakage current : I = 300 A (max) (V = 800 V) DSS DS Enhancement-mode : Vth = 1.5~3.5 V (V = 10 V, I = 1

8.5. Size:194K toshiba
2sk1118.pdf

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

8.6. Size:55K no
2sk1117.pdf

8.7. Size:132K no
2sk1114.pdf

8.8. Size:261K inchange semiconductor
2sk1117.pdf

isc N-Channel MOSFET Transistor 2SK1117FEATURESDrain Current I = 6.0A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSStatic Drain-Source On-Resistance: R = 1.25(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpo

8.9. Size:260K inchange semiconductor
2sk1115.pdf

isc N-Channel MOSFET Transistor 2SK1115FEATURESDrain Current I = 20A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

8.10. Size:261K inchange semiconductor
2sk1114.pdf

isc N-Channel MOSFET Transistor 2SK1114FEATURESDrain Current I = 12A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 70m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurpose

8.11. Size:262K inchange semiconductor
2sk1119.pdf

isc N-Channel MOSFET Transistor 2SK1119FEATURESDrain Current I = 4.0A@ T =25D CDrain Source Voltage-: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 3.8(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpurp

8.12. Size:250K inchange semiconductor
2sk1118.pdf

isc N-Channel MOSFET Transistor 2SK1118DESCRIPTIONDrain Current I =6A@ T =25D CDrain Source Voltage-: V = 600V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage, high speed power switchingapplications such as switching regulators, converters,solenoid and rela

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