2SK113R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: 2SK113R

Tipo de FET: JFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 0.25 W

Tensión compuerta-fuente (Vgs): 50 V

Corriente continua de drenaje (Id): 0.03 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 100 Ohm

Empaquetado / Estuche: TO18

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2SK113R Datasheet (PDF)

1.1. 2sk113r 2sk113o 2sk113y.pdf Size:88K _update

4.1. 2sk1134.pdf Size:60K _update-mosfet

4.2. 2sk1132.pdf Size:391K _nec

4.3. 2sk1133.pdf Size:363K _nec

4.4. 2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf Size:88K _interfet

Databook.fxp 1/13/99 2:09 PM Page D-3 01/99 D-3 Japanese Equivalent JFET Types Silicon Junction Field-Effect Transistors 2SK113 2SK152 2SK363 2SJ44 Japanese IFN113 IFN152 IFN363 IFP44 InterFET NJ132 NJ132L NJ450 PJ99 Process N N N P Unit Channel Channel Channel Channel Limit Parameters V – 50 – 20 – 40 25 BVGSS Min 1.0 0.1 1.0 1.0 nA IGSS (– 20 V) (–10 V) (– 30 V) (

4.5. 2sk1134.pdf Size:202K _inchange_semiconductor

isc N-Channel MOSFET Transistor 2SK1134 DESCRIPTION ·Drain Current –I =45A@ T =25℃ D C ·Drain Source Voltage- : V =50V(Min) DSS ·Fast Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High speed power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL ARAMETER VALUE UNIT V Drain-Source Voltage (V =0) 50 V

4.6. 2sk1133-3.pdf Size:949K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1133 SOT-23-3 Unit: mm +0.2 2.9-0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 50V 1 2 ● ID = 100 mA +0.02 +0.1 0.15 -0.02 0.95 -0.1 ● RDS(ON) ＜ 50Ω (VGS = 4V ) +0.1 1.9 -0.2 ● Complments the 2SJ166 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 5

4.7. 2sk1133.pdf Size:910K _kexin

SMD Type MOSFET N-Channel MOSFET 2SK1133 SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 50V 1 2 ● ID = 100 mA +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 ● RDS(ON) ＜ 50Ω (VGS = 4V ) ● Complments the 2SJ166 1.Gate 2.Drain 3.Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 50 V G

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