2SK113R MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2SK113R
Tipo de FET: JFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.25 W|Vgs|ⓘ - Voltaje máximo fuente - puerta: 50 V
|Id|ⓘ - Corriente continua de drenaje: 0.03 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 100 Ohm
Paquete / Cubierta: TO18
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2SK113R Datasheet (PDF)
2sk113 2sk152 2sk363 2sj44 ifn113 ifn152 ifn363 ifp44.pdf
Databook.fxp 1/13/99 2:09 PM Page D-301/99 D-3Japanese Equivalent JFET TypesSilicon Junction Field-Effect Transistors2SK113 2SK152 2SK363 2SJ44JapaneseIFN113 IFN152 IFN363 IFP44InterFETNJ132 NJ132L NJ450 PJ99ProcessN N N P UnitChannel Channel Channel Channel Limit ParametersV 50 20 40 25 BVGSSMin1.0 0.1 1.0 1.0 nAIGSS( 20 V) (10 V) ( 30 V) (
2sk1133.pdf
SMD Type MOSFETN-Channel MOSFET2SK1133SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features VDS (V) = 50V1 2 ID = 100 mA+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.1 RDS(ON) 50 (VGS = 4V ) Complments the 2SJ1661.Gate2.Drain3.Source Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 50V G
2sk1133-3.pdf
SMD Type MOSFETN-Channel MOSFET2SK1133SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.13 Features VDS (V) = 50V1 2 ID = 100 mA+0.02+0.10.15 -0.020.95 -0.1 RDS(ON) 50 (VGS = 4V ) +0.11.9 -0.2 Complments the 2SJ1661. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source Voltage VDS 5
2sk1134.pdf
isc N-Channel MOSFET Transistor 2SK1134DESCRIPTIONDrain Current I =45A@ T =25D CDrain Source Voltage-: V =50V(Min)DSSFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL ARAMETER VALUE UNITV Drain-Source Voltage (V =0) 50 V
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: 2N7288H
History: 2N7288H
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918